JS28F128M29EWLA Allicdata Electronics
Allicdata Part #:

JS28F128M29EWLA-ND

Manufacturer Part#:

JS28F128M29EWLA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par...
DataSheet: JS28F128M29EWLA datasheetJS28F128M29EWLA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Base Part Number: JS28F128
Description

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Memory - JS28F128M29EWLA Application Field and Working Principle

JS28F128M29EWLA is a type of non-volatile Flash memory from Micron, a leading manufacturer of memory products. It is a Flash-based, multi-level cell (MLC) non-volatile memory and is a member of Micron’s Synchronous NAND Flash family. It is designed to provide a cost-effective solution for applications that require large amounts of non-volatile storage. JS28F128M29EWLA is available in both 8Gbit (1GB) and 16Gbit (2GB) densities.

Application Fields

JS28F128M29EWLA is widely used in embedded applications such as Automotive Electronics, Industrial Automation, Consumer Electronics, Wireless Networking, Medical Equipment, and other applications that require large amounts of non-volatile storage such as USB drives and media cards.

JS28F128M29EWLA is also widely used in mobile phones and tablets due to its high data throughput and low power consumption. It is capable of delivering up to 40MB/s read and 3.2MB/s write speeds and has high endurance with up to 10K write/erase cycles.

The non-volatile memory is also used in various production and test processes, as it can store large amounts of data without the need for power which allows for easy storage and retrieval. It is also well suited to applications that require fast initial data retrieval.

Working Principle

JS28F128M29EWLAFlash memory works by storing data in memory cells on a silicon wafer. These cells can be programmed with binary data which is stored and retrieved by passing current through the cells. When no current is applied, the cells remain locked. When current is applied, the cells become unlocked, allowing the data to be read or written.

JS28F128M29EWLA memory is organized in blocks of data that can be programmed and erased in unison. In operation, data is written to the memory in units of pages, which are typically from 512B to 4KB in size. Data is programed and read in full pages, and can be deleted in big blocks. This makes JS28F128M29EWLA memory an ideal choice for applications that require fast write and read operations.

One of the major advantages of JS28F128M29EWLA memory is its low power consumption and high performance. The memory consumes as little as 1.14V for programming and 1.07V for reading. This makes it an ideal choice for mobile devices that require long battery life and depend on efficient memory.

Conclusion

JS28F128M29EWLA Flash memory is a high-density, low-power, multi-level cell non-volatile memory that is suitable for use in a wide range of applications. It offers high speed read and write performance, low power consumption, and excellent endurance. It is also an ideal choice for embedded applications that require large amounts of non-volatile memory such as USB drives, media cards, and production and test processes.

The specific data is subject to PDF, and the above content is for reference

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