Allicdata Part #: | JS28F256J3F105BTR-ND |
Manufacturer Part#: |
JS28F256J3F105B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | JS28F256J3F105B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 105ns |
Access Time: | 105ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | JS28F256 |
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Memory is a type of computer component used to store data, either temporarily or permanently. The JS28F256J3F105B TR is a type of semiconductor memory device that is used in many applications. This article will discuss the application field and working principle of this memory device.
Application Field
The JS28F256J3F105B TR is a multi-purpose memory device that can be used in a variety of applications. This form of memory is commonly used in consumer electronics and industrial automation systems. It is also used in automotive applications, medical equipment, and for embedded systems in communication equipment. In addition to these applications, this type of memory is also used in the aerospace and defense sectors.
The JS28F256J3F105B TR has a couple of other notable application fields as well. It is used for burn-in testing to determine the reliability of various components, and can also be found in scientific instruments that require a considerable amount of memory. For example, it can be used in laboratory equipment, test equipment, and even weather satellites.
Working Principle
The JS28F256J3F105B TR works on the same basic principle as other types of semiconductor memory. It is made up of memory cells that are arranged in rows and columns. Each cell contains an electronic circuit that can store a single bit of data. Data is written to the memory through a series of electrical signals, and it is typically organized into sections called blocks.
The JS28F256J3F105B TR has a write cycle time of 25ns, which is relatively fast compared to other types of memory. In addition, it has a number of features designed to improve the performance of the memory. These include data burst, page mode, and self-timing capabilities. All of these features work together to provide a more efficient and reliable way to store data.
In addition to its fast write cycle time and reliable performance, the JS28F256J3F105B TR is also known for its power efficiency. It is designed to operate at a lower voltage than other types of memory, which reduces the power consumption of the device. This is ideal for applications that are sensitive to power consumption, such as portable devices and battery-operated systems.
Conclusion
The JS28F256J3F105B TR is a multi-purpose memory device that can be used in numerous applications. It has a fast write cycle time and a number of features designed to improve the performance of the memory. In addition, it is known for its power efficiency, which makes it a good choice for applications where power consumption is a concern. All of these features make the JS28F256J3F105B TR a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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