Allicdata Part #: | JS28F512M29EWHBTR-ND |
Manufacturer Part#: |
JS28F512M29EWHB TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa... |
DataSheet: | JS28F512M29EWHB TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8, 32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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JS28F512M29EWHB TR Memory Application Field and Working Principle
JS28F512M29EWHB TR is one of the most advanced memory products on the market. It is a type of high-density non-volatile memory designed for embedded applications. This memory is manufactured by the GlobalFoundries, and is used in a variety of devices, ranging from digital audio and video devices to medical instruments and electronic systems. This article will discuss the application fields of the JS28F512M29EWHB TR memory and its working principle.
Application Fields
JS28F512M29EWHB TR memory is used in a variety of application fields. It is used for storage, data processing, and other functions in embedded systems. The most common applications include data logging, telemetry, and communications. In data logging applications, the memory is used to store large amounts of data in an efficient manner, enabling the logging and measurement of various physical phenomena. The telemetry applications of the memory include transmitting monitoring data from various sources to a server. Telecommunications applications involve the storage and transmission of voice and digital data. In addition to these application fields, the memory is also used in a wide range of industrial, medical, and consumer products.
Working Principle
JS28F512M29EWHB TR memory utilizes a NAND technology, which is characterized by high-density data storage. This type of memory is made up of a special type of semiconductor chip known as a NAND gate array. NAND gates are two-input logic gates that separate the logic from the data, enabling more efficient data storage by reducing the required number of gates. The logic gates are arranged in a matrix-style of structure, enabling data to be stored as binary code (zeros and ones).
The working principle of the JS28F512M29EWHB TR memory involves the control of the NAND gates. When the memory is powered, the logic gates are activated, enabling the data to be written and read. In order to read a bit of data, a small electric current is applied to the NAND gates. Depending on the size of the electric current, the gates will produce a binary code in the form of a digital signal. This signal is then sent to the memory controller, which processes it and sends it to the host device.
The JS28F512M29EWHB TR memory is a powerful and versatile memory product. It is used in a variety of embedded applications, from telecommunications to consumer devices. Moreover, its working principle is superior, as it utilizes a NAND gate array to store data in an efficient manner. For these reasons, this memory is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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