JS28F512M29EWHB TR Allicdata Electronics
Allicdata Part #:

JS28F512M29EWHBTR-ND

Manufacturer Part#:

JS28F512M29EWHB TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa...
DataSheet: JS28F512M29EWHB TR datasheetJS28F512M29EWHB TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JS28F512M29EWHB TR Memory Application Field and Working Principle

JS28F512M29EWHB TR is one of the most advanced memory products on the market. It is a type of high-density non-volatile memory designed for embedded applications. This memory is manufactured by the GlobalFoundries, and is used in a variety of devices, ranging from digital audio and video devices to medical instruments and electronic systems. This article will discuss the application fields of the JS28F512M29EWHB TR memory and its working principle.

Application Fields

JS28F512M29EWHB TR memory is used in a variety of application fields. It is used for storage, data processing, and other functions in embedded systems. The most common applications include data logging, telemetry, and communications. In data logging applications, the memory is used to store large amounts of data in an efficient manner, enabling the logging and measurement of various physical phenomena. The telemetry applications of the memory include transmitting monitoring data from various sources to a server. Telecommunications applications involve the storage and transmission of voice and digital data. In addition to these application fields, the memory is also used in a wide range of industrial, medical, and consumer products.

Working Principle

JS28F512M29EWHB TR memory utilizes a NAND technology, which is characterized by high-density data storage. This type of memory is made up of a special type of semiconductor chip known as a NAND gate array. NAND gates are two-input logic gates that separate the logic from the data, enabling more efficient data storage by reducing the required number of gates. The logic gates are arranged in a matrix-style of structure, enabling data to be stored as binary code (zeros and ones).

The working principle of the JS28F512M29EWHB TR memory involves the control of the NAND gates. When the memory is powered, the logic gates are activated, enabling the data to be written and read. In order to read a bit of data, a small electric current is applied to the NAND gates. Depending on the size of the electric current, the gates will produce a binary code in the form of a digital signal. This signal is then sent to the memory controller, which processes it and sends it to the host device.

The JS28F512M29EWHB TR memory is a powerful and versatile memory product. It is used in a variety of embedded applications, from telecommunications to consumer devices. Moreover, its working principle is superior, as it utilizes a NAND gate array to store data in an efficient manner. For these reasons, this memory is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JS28" Included word is 40
Part Number Manufacturer Price Quantity Description
JS28F640J3D75A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75A Micron Techn... -- 1000 IC FLASH 32M PARALLEL 56T...
JS28F128J3D75A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F640J3D75E Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75E Micron Techn... -- 1000 IC FLASH 32M PARALLEL 56T...
JS28F256P33T95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33B95A Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F128P33B85A Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F128P33T85A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F640P33B85A Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F640P33T85A Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F256J3D95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F640J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 32M PARALLEL 56T...
JS28F128J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F640J3D75D TR Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75D TR Micron Techn... 0.0 $ 1000 IC FLASH 32M PARALLEL 56T...
JS28F256P30B95B TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256J3D95B TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256M29EWLA Micron Techn... -- 35 IC FLASH 256M PARALLEL 56...
JS28F256P30TFA Micron Techn... 24.62 $ 600 IC FLASH 256M PARALLEL 56...
JS28F256P30BFA Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33TFA Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33BFA Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256M29EWHA Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F00AM29EWH0 Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 56TS...
JS28F00AM29EWL0 Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 56TS...
JS28F640P30B85A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F640P30T85A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F128P30B85A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F128P30T85A Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F256P30B95A Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F256P30T95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F160B3TD70A Micron Techn... 0.0 $ 1000 IC FLASH 16M PARALLEL 48T...
JS28F160C3BD70A Micron Techn... -- 1000 IC FLASH 16M PARALLEL 48T...
JS28F160C3TD70A Micron Techn... 0.0 $ 1000 IC FLASH 16M PARALLEL 48T...
JS28F320C3BD70A Micron Techn... -- 1000 IC FLASH 32M PARALLEL 48T...
JS28F320C3TD70 Micron Techn... -- 1000 IC FLASH 32M PARALLEL 48T...
JS28F256J3F1058 TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F00AM29EBHB TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLELFLASH...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics