Allicdata Part #: | JS28F512M29EWL0-ND |
Manufacturer Part#: |
JS28F512M29EWL0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa... |
DataSheet: | JS28F512M29EWL0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8, 32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F512M29EW |
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JS28F512M29EWL0 Memory
The JS28F512M29EWL0 is a 512 Mbit flash memory device, which is an integrated, non-volatile memory featuring a high speed access time. The memory device includes a high capacity storage and a controller on-chip, enabling the device to be used in many different types of applications. This article will discuss the application field and working principle of the JS28F512M29EWL0 memory.
Application Field
The JS28F512M29EWL0 is a high speed, low cost flash memory solution, providing enhanced performance and reliability in a wide variety of applications. Its potential applications include automotive systems, consumer electronics, medical devices and industrial automation.
The memory can also be used in mobile or wireless applications, as it is designed to be highly reliable and has low power consumption. The device also offers an extremely fast access time, making it suitable for high speed applications. In addition, the memory can be used in a wide range of other applications, such as for industrial, military and aerospace applications.
Because the JS28F512M29EWL0 memory is a non-volatile solution, it can store data even when the power is turned off. This makes it ideal for applications where data must be retained even when power is not present.
Working Principle
The working principle of the JS28F512M29EWL0 memory device is similar to that of a conventional flash memory device. It consists of a series of n-channel and p-channel transistors, which are connected in series. When a voltage is applied, the transistors conduct current, and the data stored is written to the memory.
The memory device can be operated in either read or write mode, depending on the needs of the application. In read mode, the data is read from the memory, while in write mode, the data is written to the memory. The device supports both single-bit and multi-bit operations.
The JS28F512M29EWL0 memory is designed to allow for high speed access and a low power consumption. It has been designed to be highly reliable and is capable of operating in temperatures from -50°C to +125°C.
Conclusion
The JS28F512M29EWL0 memory device is a high speed, low cost flash memory solution, providing enhanced performance and reliability in a wide variety of applications. Its potential applications include automotive systems, consumer electronics, medical devices and industrial automation. The device supports both single-bit and multi-bit operations, and is capable of operating in temperatures from -50°C to +125°C. The working principle of the memory device is similar to that of a conventional flash memory device.
The specific data is subject to PDF, and the above content is for reference
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