JS28F640J3F75B TR

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JS28F640J3F75B TR is a Flash memory device from the Intel® StrataFlash™ family, which provides a combination of high density and high performance coupled with low power, high quality and maximum system flexibility. The device is up to 64Mbit in size and is available in component configurations of x8, x16 and x32. These flash memory devices are ideal for a wide range of applications such as consumer electronics, networking and telecommunications, and automotive systems.

Features & Benefits

• Single-power supply 3.3V-only operation
• Available in 64Mb densities
• Byte or page read-modify-write operations
• Hardware write protection
• Convenient x8, x16 and x32 component configurations available
• Flexible power down modes
• Industrial temperature grade
• Hardware and software data protection
• High memory Endurance and low-powered operation

Application Field

JS28F640J3F75B TR can be used for a variety of applications, including digital still cameras, digital video cameras, cellular phones, PDAs, VoIP phones, audio systems, automotive systems, home appliances, industrial controllers and computers, among others.

In the field of digital still cameras, the device can be used to store images on digital cameras, as well as pictures and videos taken with the camera. In the field of digital video cameras, the device can be used to store and playback video. In other applications such as cellular phones and PDAs, the device can be used to store data, including programs, contact information, and text messages. In automotive systems, the device can be used to store navigation data, fuel and speed information, engine settings, and more.

Working Principle

The basic operations of a Flash memory device, such as JS28F640J3F75B TR, are read, write and erase. Reads and writes are done with the help of transistors while erase operations are done with the techniques of Fowler-Nordheim tunneling. The memory cells used in the devices are one transistor memory cells, also known as single-transistor cells. In such cells, a transistor is used to store a single bit of information.

In order to store multiple bits, the device makes use of a array of memory cells organized into memory blocks. Each memory block typically consists of a group of 32 or 64 cells. To read a byte or page of stored data, the device typically performs a read operation on each of the bit lines present in the memory block.

Write operations are typically done in a similar manner, where the device writes a byte or page of data to the memory block by setting the requisite bit values on all the bit lines. Erase operations are done using a tunneling process known as Fowler-Nordheim tunneling. This involves setting high voltage on all the bit lines in the memory block and using the electrons from a tunneling process to reset the bits.

JS28F640J3F75B TR also makes use of a voltage pump circuit to help read, write, and erase operations. This circuit helps in boosting the supply voltage to the appropriate levels for each operation, thereby allowing the device to operate with relatively low power.

Conclusion

JS28F640J3F75B TR is a Flash memory device from the Intel StrataFlash family, which is capable of providing high memory density and performance with low power and high quality. The device uses one transistor memory cells and a voltage pump circuit to perform read, write and erase operations. It can be used in a variety of applications and is ideal for consumer electronics, automotive systems and other applications.

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