Allicdata Part #: | JS28F640J3F75G-ND |
Manufacturer Part#: |
JS28F640J3F75G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | JS28F640J3F75G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | JS28F640 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JS28F640J3F75G used in the field of memory storage is quite common. It is a flash memory integrated circuit with a capacity of 8 megabits. It has many features and advantages making it an excellent choice for many applications. As such, it is widely used in a variety of fields such as automotive, industrial, automotive, consumer electronics and embedded systems.
The main features that make the JS28F640J3F75G an excellent choice for any application include its low power consumption, wide operating temperature range and excellent reliability. It is capable of operation at temperatures ranging from -40°C to +85°C, making it suitable for use in many applications where the environment may have extreme temperatures. In addition, the device consumes very low power, making it ideal for battery operated devices. The device also provides reliable and fast data storage.
The working principle of the JS28F640J3F75G is based on the Non-Volatile Memory technology. This type of memory does not require a constant power supply to maintain its contents, unlike volatile memory devices. Rather, the non-volatile memory will retain its content even after a power interruption. The memory device is based on a silicon chip, which is composed of millions of microscopic transistors. When the device is powered on, the transistors in the chip will switch to an ‘on’ state, thus allowing the data to be stored or retrieved. When the power to the device is removed, the transistors will switch back to an ‘off’ state, thus protecting the stored data.
The JS28F640J3F75G is available in a wide range of memory densities and package types. This enables the device to be used in a variety of applications with different memory demand requirements. Special assembly and testing methods are also used to ensure that all products are free from defects and that they meet the highest quality standards.
In summary, the JS28F640J3F75G is an excellent choice for memory storage applications. It has many features, such as low power consumption, wide temperature range and excellent reliability. In addition, the device uses a Non-Volatile Memory technology, which provides reliable and fast data storage. Finally, it is available in a range of different memory densities and package types, enabling it to be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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