L6569D013TR

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The L6569D013TR is a 3-phase Gate Driver IC designed to serve the power management application field. It has been designed to integrate highly regulated voltage levels to accurately drive the gate of an external power MOSFET or a power IGBT.

The Gate Driver IC incorporates various features such as a built-in 6A bipolar current mirror for over-current protection, an enable/shutdown pin for ON/OFF control, an ERR pin for current sensing and a PWM input pin for PWM speed control. In addition to these features, the L6569D013TR also incorporates a 3-phase synchronous rectification control, which helps reduce power losses caused by conduction and switching losses. The Gate Driver IC also features a wide operating temperature range, low output voltage offset and a low supply current, which makes it suitable for a wide variety of applications.

In terms of its working principle, the L6569D013TR has been designed to respond to low voltage PWM signals for driving the gates of an external power MOSFET or power IGBT. It provides an accurate gated drive when it is enabled and allows for fast switching times for switching of the external power device. The Gate Driver IC also allows for adjustable gate drive as it provides adjustable current limits, as well as adjustable rise and fall times. The Gate Driver IC also monitors the state of the gate, which helps provide reliable and safe gate operation by preventing gate shoot-through.

Overall, the L6569D013TR Gate Driver IC is a highly integrated device designed to serve the power management application field. It is designed to accurately and reliably respond to low voltage PWM signals and drives an external power device. It also provides a number of features such as over-current protection, PWM speed control, an internal 6A bipolar current mirror and adjustable current limit, rise and fall times. This makes the L6569D013TR a suitable solution for a wide variety of applications.

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