LM5101AMR/NOPB

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1. Description

The LM5100A/B/C and LM5101AMR/NOPB high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds LM5101AMR/NOPB or TTL input thresholds. An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101AMR/NOPB are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

2. Features

    1. Drives Both a High-Side and Low-Side N-Channel MOSFETs

    2. Independent High- and Low-Driver Logic Inputs

    3. Bootstrap Supply Voltage up to 118 V DC

    4. Fast Propagation Times (25-ns Typical)

    5. Drives 1000-pF Load With 8-ns Rise and Fall Times

    6. Excellent Propagation Delay Matching (3-ns Typical)

    7. Supply Rail Undervoltage Lockout

    8. Low Power Consumption

    9. Pin Compatible With HIP2100/HIP2101

3. Applications

    1. Current-Fed Push-Pull Converters

    2. Half and Full Bridge Power Converters

    3. Synchronous Buck Converters

    4. Two Switch Forward Power Converters

    5. Forward with Active Clamp Converters

4. Application Information

To affect fast switching of power devices and reduce associated switching power losses, a powerful gate driver is employed between the PWM output of controllers and the gates of the power semiconductor devices. Also, gate drivers are indispensable when it is impossible for the PWM controller to directly drive the gates of the switching devices. With the advent of digital power, this situation will be often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal which cannot effectively turn on a power switch. Level shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate with digital power because they lack level-shifting capability. Gate drivers effectively combine both the level-shifting and buffer-drive functions. Gate drivers also find other needs such as minimizing the effect of high-frequency switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses from the controller into the driver. The LM5100A/B/C and LM5101AMR/NOPB are the high voltage gate drivers that are designed to drive both the highside and low-side N-Channel MOSFETs in a half bridge/full bridge configuration or in a synchronous buck circuit. The floating high side driver is capable of operating with supply voltages up to 100 V. This allows for N-Channel MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies. The outputs are independently controlled. Each channel is controlled by its respective input pins (HI and LI), allowing full and independent flexibility to control on and off state of the output.