LM5109BMA Allicdata Electronics
Allicdata Part #:

LM5109BMA-ND

Manufacturer Part#:

LM5109BMA

Price: $ 0.98
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC DVR HALF-BRIDGE 90V 1A 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: LM5109BMA datasheetLM5109BMA Datasheet/PDF
Quantity: 1000
1 +: $ 0.98000
10 +: $ 0.95060
100 +: $ 0.93100
1000 +: $ 0.91140
10000 +: $ 0.88200
Stock 1000Can Ship Immediately
$ 0.98
Specifications
Current - Peak Output (Source, Sink): 1A, 1A
Base Part Number: LM5109
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 15ns, 15ns
High Side Voltage - Max (Bootstrap): 108V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Voltage - Supply: 8 V ~ 14 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Not For New Designs
Packaging: Tube 
Description

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The LM5109BMA is a high current, high frequency high-side Gate driver from Texas Instruments suitable for use in both synchronous and asynchronous switching applications. With its 0.87A peak source and 1A peak sink current and up to 35V maximum supply voltage this product is suitable for driving the high voltage switching transistors in Buck, Boost, Buck-Boost, Low Side and High Side drivers.

The LM5109BMA is able to drive both N-channel and P-channel power MOSFETs, and is packaged in the small 8-Pin Enhanced Low Profile (ePOW) package making it suitable for use in space constrained applications. The device is designed to be used with switching applications operating at frequencies up to 750kHz, allowing higher levels of integration and reduced component count (as opposed to lower-frequency switching applications).

The operating principle of the LM5109BMA is similar to most general gate drivers, with the Gate driver pin supplying a high current gate drive signal to the power MOSFET, thus acting as an interface between the low-power control section (MCU or logic gate) and the power section.

The device is designed using an H-Bridge architecture with two independent high current channels, capable of sourcing or sinking up to 1A of current. This allows two power MOSFETs to be driven simultaneously in a synchronous configuration, or two N- and P-channel MOSFETs to be driven in an asynchronous configuration.

The LM5109BMA also features integrated fault features, such as short to ground or short to Vcc over-current protection, as well as adjustable dead-time and programmable under-voltage and over-voltage protection. These features are designed to protect the Gate Driver and other components in the circuit in case of an over-current/over-voltage event.

In addition to these integrated fault features, the LM5109BMA also offers a wide range of integrated control and diagnostic features, such as integrated over-temperature protection, adjustable output voltage slew rate and programmable rise/fall time, dead-time and under-voltage/over-voltage protections.

These features make the LM5109BMA an ideal solution for use in Buck, Buck-Boost, Low Side and High Side drivers, as well as other power management solutions such as synchronous and asynchronous switching applications.

The specific data is subject to PDF, and the above content is for reference

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