Allicdata Part #: | LM5109BMA-ND |
Manufacturer Part#: |
LM5109BMA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC DVR HALF-BRIDGE 90V 1A 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | LM5109BMA Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | 1A, 1A |
Base Part Number: | LM5109 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 15ns, 15ns |
High Side Voltage - Max (Bootstrap): | 108V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Voltage - Supply: | 8 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The LM5109BMA is a high current, high frequency high-side Gate driver from Texas Instruments suitable for use in both synchronous and asynchronous switching applications. With its 0.87A peak source and 1A peak sink current and up to 35V maximum supply voltage this product is suitable for driving the high voltage switching transistors in Buck, Boost, Buck-Boost, Low Side and High Side drivers.
The LM5109BMA is able to drive both N-channel and P-channel power MOSFETs, and is packaged in the small 8-Pin Enhanced Low Profile (ePOW) package making it suitable for use in space constrained applications. The device is designed to be used with switching applications operating at frequencies up to 750kHz, allowing higher levels of integration and reduced component count (as opposed to lower-frequency switching applications).
The operating principle of the LM5109BMA is similar to most general gate drivers, with the Gate driver pin supplying a high current gate drive signal to the power MOSFET, thus acting as an interface between the low-power control section (MCU or logic gate) and the power section.
The device is designed using an H-Bridge architecture with two independent high current channels, capable of sourcing or sinking up to 1A of current. This allows two power MOSFETs to be driven simultaneously in a synchronous configuration, or two N- and P-channel MOSFETs to be driven in an asynchronous configuration.
The LM5109BMA also features integrated fault features, such as short to ground or short to Vcc over-current protection, as well as adjustable dead-time and programmable under-voltage and over-voltage protection. These features are designed to protect the Gate Driver and other components in the circuit in case of an over-current/over-voltage event.
In addition to these integrated fault features, the LM5109BMA also offers a wide range of integrated control and diagnostic features, such as integrated over-temperature protection, adjustable output voltage slew rate and programmable rise/fall time, dead-time and under-voltage/over-voltage protections.
These features make the LM5109BMA an ideal solution for use in Buck, Buck-Boost, Low Side and High Side drivers, as well as other power management solutions such as synchronous and asynchronous switching applications.
The specific data is subject to PDF, and the above content is for reference
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