Allicdata Part #: | LM5109SDTR-ND |
Manufacturer Part#: |
LM5109SD |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC DVR HALF-BRIDGE 100V 1A 8WSON |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-WSON (4... |
DataSheet: | LM5109SD Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | 1A, 1A |
Base Part Number: | LM5109 |
Supplier Device Package: | 8-WSON (4x4) |
Package / Case: | 8-WDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 15ns, 15ns |
High Side Voltage - Max (Bootstrap): | 118V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Voltage - Supply: | 8 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The LM5109SD is a high-voltage, fixed-frequency synchronous buck gate driver that is designed to drive two N-channel power MOSFETs in a synchronous buck converter. This driver was designed to meet both Industrial and Automotive Safety Integrity Level requirements, addressing harsh environmental conditions while maintaining galvanic isolation of the low-side driver. In terms of design, the LM5109SD features integrated bootstrap diodes, integrated level shift to reduce gate drive ringing and slew rate control to reduce power dissipation.
The LM5109SD is specifically tailored for applications such as Automotive, Industrial and Aerospace. It is also suitable for other applications such as power management, battery chargers, voltage regulation, motor and microcontroller control, lighting, audio/video and inductive loads. It is designed to drive power MOSFETs at frequencies of up to 1 MHz and is optimized for operating temperature range of -40°C to +125°C.
The LM5109SD is a synchronous buck gate driver that operates from a 12 V supply voltage, and is designed to drive two N-channel MOSFETs. It features a low-side driver featuring active clamping to reduce switching losses and reducing inductor current at turn-on, resulting in improved efficiency. Additionally, the device features reversed polarity protection and over-temperature protection.
The LM5109SD is a high-voltage gate driver with integrated gate drive and protection features that allow it to drive up to 25 A of peak gate current and up to 50 V of output voltage. It also integrates a Level Shift that enables the device to operate with gate voltages up to the maximum rating of the MOSFET at low switch frequency. To minimize power dissipation and reduce switching losses, the LM5109SD employs an adjustable Slew Rate Control function. Additionally, it utilizes a current limiting feature to provide protection to the gate drive while allowing extended overload operation.
The LM5109SD is designed to meet the performance, reliability and safety requirements of automotive, industrial and aerospace applications. The device provides galvanic isolation with reinforced isolation, meeting tight specifications for creepage and clearance. It also features EMI/RFI noise-immunity and a noise-reduction technique, ensuring the output is clean and reliable. Lastly, the device is designed to operate over a wide temperature range, ensuring that it can be used in demanding applications.
The specific data is subject to PDF, and the above content is for reference
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