Allicdata Part #: | LM5111-1M-ND |
Manufacturer Part#: |
LM5111-1M |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC MOSFET DRIVER DUAL 5A 8-SOIC |
More Detail: | Low-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | LM5111-1M Datasheet/PDF |
Quantity: | 1000 |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Base Part Number: | LM5111 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 14ns, 12ns |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 3A, 5A |
Series: | -- |
Voltage - Supply: | 3.5 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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The LM5111-1M is a gate driver intended for modern electronic applications. It is often used in pulse width modulated circuits, such as those found in solar-powered cars and aircraft electrical systems. It works as a driver which can switch the FET gate on or off, depending on the input signal. This allows the power MOSFETs to be accurately controlled without the need for costly current-limiting active components like gate resistors. The LM5111-1M is a versatile and cost-effective solution
The LM5111-1M is designed to handle a wide variety of load requirements and switching frequencies. Its feature set is designed around pulse width modulated applications, running off of -85V to +18V supplies. It comes in a dual-in-line package and offers both thermal and voltage protection. This makes it a great choice for high power switching applications, where reliable operation and cost efficiency are essential.
The main feature of the LM5111-1M is its ability to switch quickly and efficiently. It comes with a fast turn-on, making it ideal for high speed applications. It also boasts an adjustable switching speed, allowing for more control over power management. Furthermore, its operation is very reliable, offering a wide temperature range and improved voltage handling.
The LM5111-1M includes protection against over-current and under-voltage conditions. This helps to prevent short circuits and other misbehavior caused by incorrect wiring or user errors. The driver also offers protection against electrostatic discharge and is compatible with a wide range of electronics components.
In terms of its working principle, the LM5111-1M is designed with a two-stage switching architecture. In order to switch the power MOSFETs on or off, two separate signals are sent to the gate driver. The first signal is a low voltage, high current signal that is used to activate the FET’s gate resistance. The second signal is a higher voltage, low current signal, which is used to charge the FET’s gate capacitance. Once this is done, the power MOSFETs can be switched on or off with precise accuracy, allowing for fast and efficient power management.
The LM5111-1M gate driver is a great choice for a variety of applications, including solar powered vehicles and aircraft electrical systems. It offers reliable switching and adjustable speed, making it suitable for high power and pulsewidth modulated systems. Furthermore, it offers protection from electrostatic discharge, as well as a wide range of current and voltage ranges. Overall, the LM5111-1M is a cost-effective and versatile gate driver solution.
The specific data is subject to PDF, and the above content is for reference
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