LM5111-2M/NOPB Integrated Circuits (ICs) |
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Allicdata Part #: | LM5111-2M/NOPB-ND |
Manufacturer Part#: |
LM5111-2M/NOPB |
Price: | $ 1.25 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC MOSFET DRIVER DUAL 5A 8-SOIC |
More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
DataSheet: | LM5111-2M/NOPB Datasheet/PDF |
Quantity: | 344 |
1 +: | $ 1.14030 |
10 +: | $ 1.02186 |
100 +: | $ 0.82127 |
500 +: | $ 0.67473 |
1000 +: | $ 0.55906 |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Base Part Number: | LM5111 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 14ns, 12ns |
Input Type: | Inverting |
Current - Peak Output (Source, Sink): | 3A, 5A |
Series: | -- |
Voltage - Supply: | 3.5 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tube |
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Modern power switching circuits make use of gate drivers integrated into Power Management Integrated Circuits (PMICs). The LM5111-2M/NOPB is a fully integrated PMIC gate driver with 2 MOSFET drivers onboard, that offers low slew rate control to reduce high frequency noise, and increased immunity from noise in the high frequency range. Its complimentary outputs allow for high voltage, high speed switching with extremely low output-to-output delays. Additionally, its integrated fault protection circuitry ensures protection against transient over-voltage conditions and over-current events.
The LM5111-2M/NOPB is designed specifically to meet the needs of switching power supplies including isolated AC/DC, DC/DC and other isolated SMPS applications. Its integration into the power management IC reduces board space and simplifies system design, while its performance features provide the critical capability of addressing complex designs that demand reliable and very fast gate drive capability.
Key Features
- Full dual-channel gate driver
- Low on-resistance output stages
- 500V rating, associated to fast body diode and ultra-low capacitance
- Low-input threshold for operation from “V CC” or “V DD”
- Slew rate control for improved EMI
- Output-to-output delay adjustability
- Low driving current requirement
- Integrated fault protection circuitry
- High temperature operating range of -40°C to +125°C
- U-MAX 8-pin SOIC packaging
- Isolated AC/DC and DC/DC power supplies
- Low-dropout (LDO) voltage regulators
- Forward converters
- Boost converters
- Flyback converters
- Sepic converters
- High-side and low-side switches
- Buck-boost converters
- Transformer-based SMPS
- Low-noise switching applications
Applications
Working Principle
The LM5111-2M/NOPB PMIC features optimized low-side and high-side drivers which are designed to be driven by a standard logic signal and provide a high-voltage, high-current pulse suitable for driving power MOSFETs or bipolar transistors. The device comes with a slew rate control feature, capable of limiting the transition rate of the output driver signals and reducing EMI emitted from the circuit. The integrated circuit also has two complementary outputs allowing for high voltage, high-speed switching.
The LM5111-2M/NOPB device requires a minimum supply voltage to operate in its linear region. The logic input signals regulate the output voltage of the TTL logic signals using the voltage references established by the two supply voltages. Each output driver is capable of driving a power MOSFET or a bipolar transistor to full gate voltage, based on the logic state of the associated input signal.
The power MOSFETs are turned on and off by the LM5111-2M/NOPB PMIC drivers which begins by changing the logic state of the input signal. When configured to low-side drive, the low-side FET is always turned on first, while the high-side FET is turned on after the associated input signal is asserted. Conversely, when configured to high-side drive, the high-side FET is always turned on first and the low-side FET is turned off after the associated input signal is de-asserted.
The LM5111-2M/NOPB is also integrated with fault protection circuitry which provides protection against over-voltage events and over-current conditions. During an over-current event, the device shuts off the high-side and low-side outputs. The device also features a programmable over-voltage protection (OVP) function which is designed to detect over-voltage events and shut off the output drivers.
Conclusion
The LM5111-2M/NOPB is an ideal PMIC gate driver for isolated AC/DC and DC/DC applications. It is specifically designed to drive high-current, high-voltage power MOSFETs or bipolar transistors and low RDS(ON) outputs for high efficiency and low power loss. This device offers excellent fault protection to prevent over-current, over-voltage and thermal damage. Additionally, it comes with slew rate control and output-to-output delay adjustability to reduce EMI. This integrated solution reduces costs, increases system performance and minimizes board space.
The specific data is subject to PDF, and the above content is for reference
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