| Allicdata Part #: | LM5112MYTR-ND |
| Manufacturer Part#: |
LM5112MY |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Texas Instruments |
| Short Description: | IC MOSFET GATE DRIVER 7A 8MSOP |
| More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 8... |
| DataSheet: | LM5112MY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Logic Voltage - VIL, VIH: | 0.8V, 2.3V |
| Base Part Number: | LM5112 |
| Supplier Device Package: | 8-MSOP-PowerPad |
| Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Rise / Fall Time (Typ): | 14ns, 12ns |
| Input Type: | Inverting, Non-Inverting |
| Current - Peak Output (Source, Sink): | 3A, 7A |
| Series: | -- |
| Voltage - Supply: | 3.5 V ~ 14 V |
| Gate Type: | N-Channel MOSFET |
| Number of Drivers: | 1 |
| Channel Type: | Single |
| Driven Configuration: | Low-Side |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
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The LM5112MY is a low RDS(on) N-Channel MOSFET gate driver IC, suitable for use in a variety of applications including DC/DC converters and motor control systems. It features four operating modes: low-side, high-side, contactor, and tri-state. The IC uses up to 0.7V logic signals with fast turn-on and turn-off switching speeds, enabling it to efficiently drive loads with low RDSon values.
The device is designed to operate with a wide range of input voltages from 5V to 14V and is capable of supplying gate driver currents of up to 400mA for single-ended N-channel MOSFETs. It has advanced protection features such as overvoltage protection, overcurrent protection, and short circuit protection to ensure reliable operation. The LM5112MY also has a wide temperature operating range from -40°C to 125°C.
The LM5112MY is the ideal solution for gate drive applications in DC/DC converters, motor control systems, and other applications where a low RDS(on) N-channel MOSFET gate driver is required. The device is highly integrated, cost effective, and relatively easy to implement. It provides an efficient, reliable and cost-effective solution to gate drive applications.
The LM5112MY operates on the principle of using an error amplifier to drive the compensator to control the driver current. This technique is used to maximize the efficiency of the driver and minimize the losses due to switching. The driver current is adjusted to minimize the RDS(on) of the driven MOSFET, ensuring the lowest possible conduction losses.
In addition, the LM5112MY has internal pull-up, pull-down, and clamping protection networks to reduce electromagnetic interference (EMI) from the voltage rails. The driver supports low power-on sequencing, thus reducing the power dissipation, and supports both half-bridge and full-bridge drive circuits. The IC also features an integrated voltage-level shift circuit, which allows the user to program the logic threshold voltage without external components.
The LM5112MY is an excellent solution for a wide range of gate drive applications, including DC/DC converters, motor control systems, and other applications where a low RDS(on) N-channel MOSFET gate driver is required. It provides an efficient, reliable, and cost-effective solution, making it ideal for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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LM5112MY Datasheet/PDF