MIXA225PF1200TSF Allicdata Electronics
Allicdata Part #:

MIXA225PF1200TSF-ND

Manufacturer Part#:

MIXA225PF1200TSF

Price: $ 73.67
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 250A
More Detail: IGBT Module PT Half Bridge 1200V 360A 1100W Chassi...
DataSheet: MIXA225PF1200TSF datasheetMIXA225PF1200TSF Datasheet/PDF
Quantity: 1000
3 +: $ 66.97090
Stock 1000Can Ship Immediately
$ 73.67
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 360A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
Current - Collector Cutoff (Max): 300µA
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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MIXA225PF1200TSF is a type of Module, part of the Transistors, namely IGBTs category. This popular module is beloved for its ability to provide utmost flexibility for electrical applications in a wide range of systems. Its unparalleled performance makes it one of the best choices for controlling power, current and voltage. In short, it is an ideal device for controlling current and voltage with great efficiency and reliability.

Applications

The MIXA225PF1200TSF is typically used in switching applications, motor, motor drives and an array of other electronic equipment. Primarily, it is designed for working with high current and voltage. It comes with built-in protection features such as overvoltage, overcurrent and thermal protection. Not only this, but the MIXA225PF1200TSF is also a great choice for applications related to power factor correction, frequency conversion and inversion. In addition, its ability to accommodate different operating techniques makes it suitable for a wide range of operations. With such a versatile and efficient performance, it is relatively easy to see the MIXA225PF1200TSF\'s popularity in the industry.

Working Principle

The MIXA225PF1200TSF works on the principle of power semiconductor integration. Power semiconductors are integrated circuit elements that are used to control and manage electric current and voltage. Basically, power semiconductor devices are used to either switch or control electric current and voltage in electronic circuits. So, the MIXA225PF1200TSF primarily works on the same principle as other power semiconductor devices. In contrast to the other IGBTs, the MIXA225PF1200TSF operates with relatively low voltage and high current. When the voltage increases, the electric field increases, and the resistance of the device decreases. As a result, the electron density rises and more current flows through the device. On the other hand, when the voltage decreases, the electric field decreases, and the electron density decreases. Thus, the resistance of the device increases and less current flows through it. This is the principle on which the MIXA225PF1200TSF works and depending on the situation, the electrical characteristics of the device are adjusted automatically.

Conclusion

The MIXA225PF1200TSF is a popular Module under the IGBTs category of the Transistor. Its efficiency and non-oversensitive performances make it the ideal choice for a wide range of systems. This powerful Module functions on the principle of power semiconductor integration and is capable of controlling and managing electric current and voltage. The high current and low voltage specs allow the MIXA225PF1200TSF to operate with precision and reliability within a wide range of applications, such as motor and motor drives, frequency conversion and inversion, etc. In summary, the MIXA225PF1200TSF is an outstanding Module that encompasses everything required for efficient and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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