Allicdata Part #: | MJD200RLGOSTR-ND |
Manufacturer Part#: |
MJD200RLG |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 5A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Sur... |
DataSheet: | MJD200RLG Datasheet/PDF |
Quantity: | 1000 |
1800 +: | $ 0.16745 |
3600 +: | $ 0.15267 |
5400 +: | $ 0.14282 |
12600 +: | $ 0.13297 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 45 @ 2A, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 65MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD200 |
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The MJD200RLG is a single Bipolar Junction Transistor (BJT) designed for applications such as powering low-noise audio amplifiers and crt bias, emitter follower and pulse circuits. The transistor possesses a high current gain to facilitate high current demands. The MJD200RLG is technology optimised for use in power applications, making it exceptionally reliable.
The MJD200RLG is constructed from a single-base, two-collector design, using a Darlington configuration. It has an optimum area-to-current ratio that allows for an increased current flow. This design is well suited for use in low-noise applications. The MJD200RLG is available in a variety of packages to facilitate optimum power applications.
The primary function of the MJD200RLG is to amplify a signal. It works by adding current to the emitter, thus providing the necessary boost to the output current. The two collectors of the MJD200RLG carry a large current capacity, allowing for a higher load current. The base of the MJD200RLG acts as a control over the collector current, while the emitter to base intrinsic capacitance stores and releases energy as needed.
The MJD200RLG also has a high frequency response, allowing it to be particularly useful in areas such as audio application. As a result, this makes it well suited for small, low-noise audio amplifiers and for crt bias, emitter follower and pulse circuits. As the transistor is also capable of carrying high current, it is well suited for use in power applications.
In addition, the MJD200RLG has features such as a low noise figure, low input imbalance and low offsets. The low input imbalance ensures that the signal will be accurately replicated without distortion, as the input impedance across all leads is balanced. The low noise figure improves the dynamic range and maximum power output, as well as reducing signal-to-noise ratio distortion. The low offsets guarantee that there will be low latency and its low gain-bandwidth product helps reduce signal distortion.
The MJD200RLG is an excellent choice for applications such as powering low-noise amplifiers and crt bias, emitter follower, and pulse circuits. Its high current-carrying capabilities and reliable performance make it an ideal choice for power applications. Its low noise figure, low input imbalance, and low offsets make it a great choice for low-noise applications. Its fast frequency response and higher power output make it an ideal choice for audio applications.
The specific data is subject to PDF, and the above content is for reference
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