MJD2955TF Allicdata Electronics

MJD2955TF Discrete Semiconductor Products

Allicdata Part #:

MJD2955TFTR-ND

Manufacturer Part#:

MJD2955TF

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 10A DPAK
More Detail: Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Su...
DataSheet: MJD2955TF datasheetMJD2955TF Datasheet/PDF
Quantity: 4000
2000 +: $ 0.15165
6000 +: $ 0.14119
10000 +: $ 0.13944
Stock 4000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Base Part Number: MJD2955
Description

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MJD2955TF is a type of Silicon Bipolar NPN Transistor manufactured by Fairchild Semiconductor. It is a single-package transistor, with a maximum current capacity of 15A and a collector-emitter voltage of 60V. The transistor has a power dissipation of around 350mW. As such, it is especially suited for applications that require high current, such as switching and power amplification.

MJD2955TF Application Fields

The MJD2955TF transistor\'s applications are quite varied. It can be utilized in consumer and commercial electronics, such as audio amplifiers, switching power supplies, motor speed controllers and lighting dimmers. Likewise, it is suitable for use in automotive electronics, in particular vehicle lighting circuits and engine control systems. It can also be used in industrial machinery and avionic equipment.

MJD2955TF Working Principle

The MJD2955TF transistor has three pins: a collector, an emitter and a base. The BJT (Bipolar Junction Transistor) is an NPN type transistor, meaning that electrons move from the collector terminal to the emitter terminal when a positive voltage is applied to the base terminal. In this way the flow of current between both terminals can be either switched on or off, depending on the voltage applied, allowing the transistor to be used for power amplification.

The NPN type transistor also works in the reverse configuration known as the PNP type transistor. In this design, the movement of charge carriers is from the emitter to the collector. When a negative voltage is applied to the base, then the flow of current between the two terminals is switched on.

The MJD2955TF transistor is a voltage-controlled device, meaning that the amount of current that flows through the transistor is directly proportional to the voltage applied to the base terminal. This allows the MJD2955TF transistor to offer outstanding power amplification performance by regulating the amount of current that flows through the device.

The MJD2955TF transistor also has a feature known as “saturation voltage”. This is the minimum voltage required for the transistor to start acting as an amplifier. If a smaller voltage is applied to the transistor, then it will remain in its “off” state, meaning that current will not flow between the two terminals.

Conclusion

The MJD2955TF single-package bipolar transistor has a range of applications, from consumer and commercial electronics, to automotive and industrial uses. Its NPN type structure makes it suitable for applications that require high current, such as motor speed controls, switching power supplies and audio amplifiers. Furthermore, the MJD2955TF transistor is able to regulate the amount of current that flows through it, aiding it in power amplification applications. Finally, the transistor\'s saturation voltage ensures that operation will not be affected if a smaller voltage is applied to the base terminal.

The specific data is subject to PDF, and the above content is for reference

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