MJD243T4G Allicdata Electronics

MJD243T4G Discrete Semiconductor Products

Allicdata Part #:

MJD243T4GOSTR-ND

Manufacturer Part#:

MJD243T4G

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 4A DPAK
More Detail: Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Su...
DataSheet: MJD243T4G datasheetMJD243T4G Datasheet/PDF
Quantity: 10000
2500 +: $ 0.18225
5000 +: $ 0.16968
12500 +: $ 0.16758
Stock 10000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 1.4W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD243
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJD243T4G transistors are members of the bipolar junction transistors (BJT) family, and more specifically, the single type. They have a wide range of applications and a few unique features which make them a preferred choice for many projects.

The primary benefit of a MJD243T4G is its flexibility and availability across multiple applications. For instance, it can be used as a switch, amplifier, or in push-pull systems. It is also useful for signal processing, motor control and Joule Thief circuits. Additionally, the MJD243T4G has a number of electrical and thermal characteristics which make it suitable for use in a variety of contexts.

MJD243T4G transistors have typical collector to emitter voltage (Vce in the range of 85-700V, a maximum current gain of 1000 and maximum power dissipation of 630 mW. In terms of thermal characteristics, the 100 Tesla deg C junction temperature limit allows for operation in extreme temperatures. The packaging requirements are also easy to follow, allowing for quick and easy integration into existing systems.

The working principle of the MJD243T4G is relatively straightforward. It is a three layer device, with the base, collector and emitter terminals forming the three active layers. When a voltage is applied to the base terminal, it controls the flow of current that passes from the collector to the emitter. This current can flow in either direction, depending on the relative polarities of the collector and emitter. The base impedance also influences the magnitude of the current flow.

The MJD243T4G is a popular choice for a number of applications, due to its flexibility and availability. Its unique features can be tailored to a variety of projects, making it applicable across a range of contexts. The simple working principle allows for easy integration into existing systems, whileits electrical and thermal characteristics enable it to work reliably in a wide range of temperatures. All this culminates to make the MJD243T4G a versatile and effective component for a variety of projects.

The specific data is subject to PDF, and the above content is for reference

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