Allicdata Part #: | MJD2955-ND |
Manufacturer Part#: |
MJD2955 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Su... |
DataSheet: | MJD2955 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD2955 |
Series: | -- |
Packaging: | Tube |
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The MJD2955 is a versatile, high power bipolar junction transistor (BJT) offering superior performance in many applications. It is designed for high voltage, high current, and high frequency operations, making it an ideal choice for power electronics applications. It is mainly used in switching mode supplies, motor control, high power audio amplifiers, and in various other applications where high power performance is critical.The MJD2955 is a single, NPN-type BJT which has been designed for use in high-power, power electronics applications. It contains two heavily doped N-type emitter regions separated by a more lightly doped P-type base region. The device is well-suited for use in high-frequency circuits, with its high current ratings, high-switching rates, and low-saturation voltage capabilities. It can be used to drive large inductive and capacitive loads in switching applications, with minimal power loss.The working principle of the MJD2955 is relatively simple. In operation, forward-bias is applied to the emitter-base junction, creating a forward bias of electrons that flow from the emitter toward the base region. This causes minority carriers (holes) to flow from the base to the collector region. This sets up an electric field between the collector and base regions, drawing electrons from the emitter and across the base-collector junction. This forms the basis for current amplification. In addition, the device can also be used to pass current in the reverse direction, from the collector to the emitter, in order to control the current flow in a circuit.In summary, the MJD2955 is an ideal choice for a wide range of power electronics applications, due to its high power ratings, high-switching rates, and low-saturation voltage. It is also well suited for use in high frequency circuits due to its high current ratings and low-saturation voltage. The device works on the principle of current amplification, with electrons flowing from the emitter towards the base region, and creating a field between the collector and base regions. This field sets up the current flow from the emitter to the collector, which can be used to control the current flow in a circuit.
The specific data is subject to PDF, and the above content is for reference
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