Allicdata Part #: | MJD243GOS-ND |
Manufacturer Part#: |
MJD243G |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 4A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Su... |
DataSheet: | MJD243G Datasheet/PDF |
Quantity: | 1105 |
1 +: | $ 0.54180 |
10 +: | $ 0.47880 |
100 +: | $ 0.36685 |
500 +: | $ 0.29000 |
1000 +: | $ 0.23200 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 200mA, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 40MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD243 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of field-effect transistor that is typically used in analog electronic circuits. It is a three-terminal device which provides an interface between a power source and other electronic components. A MOSFET is used to control the current flow between two terminals and are usually much larger than other transistors. The MJD243G is a Photovoltaic (Dual Fixed) MOSFET used for applications where the input voltage is greater than the output voltage.
The MJD243G is an enhancement-type MOSFET, meaning it exposes the p-type epitaxial layer to a higher voltage. When the gate voltage is greater than the intrinsic voltage of the body, holes enter the channel and create a conductive path between the source and drain terminals. This operation is known as on-state operation. When the gate voltage is lower than the intrinsic voltage of the body, the number of holes in the channel decreases and the channel is blocked. This is known as off-state operation.
The source of the MJD243G is the positive voltage and drain is the negative voltage. By applying a voltage to the gate, the current between source and drain can be regulated. The Conductivity Sub-threshold (Vgs(th)) should be lower than the regulated voltage threshold to ensure that sufficient current flows into the gate. The gate voltage must also be set to the maximum current generating value to ensure that the maximum current generated is sufficient to meet the required application.
MOSFETs are widely used in a variety of applications that require regulation of current. One example is a power-supply circuit, where the MOSFET is used to regulate current flow and voltage levels. A MOSFET can also be used in a motor control circuit to limit the current passing through the motor and regulate its speed. Other applications of the MJD243G include switching applications, switching applications where the speed or output voltage needs to be controlled, and mixed-signal circuits.
In addition to the MJD243G, there are several other types of MOSFETs available for use in applications such as switching and voltage regulation. These include depletion-type MOSFETs, which expose the n-type epitaxial layer to a higher voltage, and enhancement-type MOSFETs, which expose the p-type epitaxial layer to a higher voltage. Each type has its own distinct features and should be selected based on the application.
The MJD243G is an important component for applications that require the regulation of current or voltage levels. Its wide variety of uses and improved performance makes it an ideal choice for many applications. With proper application design and implementation, engineers can reliably use the MJD243G to provide reliable performance in their electronic designs.
The specific data is subject to PDF, and the above content is for reference
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