MJD243T4 Allicdata Electronics

MJD243T4 Discrete Semiconductor Products

Allicdata Part #:

MJD243T4OSCT-ND

Manufacturer Part#:

MJD243T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 4A DPAK
More Detail: Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Su...
DataSheet: MJD243T4 datasheetMJD243T4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 1.4W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD243
Description

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MJD243T4 is a type of bipolar junction transistor (BJT). It has a single-ended structure, which is composed of three semiconductor regions in the same chip, forming a three-layer structure: a base region, an emitter region and a collector region. The three layers are electrically connected. It is widely used in power, RF and general-purpose electronic applications.

The working principle of MJD243T4 is very simple. When a small current is applied to the base terminal of the transistor, the electric field across the base has some control over the current that flows between the emitter and collector terminals. This is known as the transistor\'s amplification effect, that is, the collector current is much larger than the base current. The collector-emitter current varies depending on the amount of base current, forming a switching effect. Furthermore, when the forward base-emitter voltage (VBE) exceeds a certain threshold voltage, the transistor is saturated, that is, achieving saturation current. Thus, the transistor can be used in various electronic circuits to create logic gates.

The MJD243T4 has a few key features, which make it suitable for a selection of high-power applications. These include its high power dissipation capabilities, up to 6.0W max, as well as its high current gain, with a hFE of 150-400. Additionally, its maximum collector-emitter voltage is considerably high, at 60V max. These properties make the MJD243T4 an ideal transistor for high power amplification and switching applications.

The MJD243T4 is commonly used in power, RF and general-purpose electronic applications, such as power amplifiers, oscillators, transistors, switching circuits and musical amplifiers. It is also used in motor drives and industrial motor control systems, as well as in charge pumps and voltage regulators. Furthermore, the MJD243T4 is used in RF and high power amplifiers, such as PA\'s and LNAs, as well as small signal multipliers and signal converters. It is a very versatile transistor that can be used in a variety of electronic systems, making it a popular choice for electronic designers.

The MJD243T4 is a very reliable and robust single transistor, making it an ideal choice for high power applications. Its high current gain and broad voltage range make it a suitable solution for a variety of applications, while its reliable performance and long life make it a reliable choice. Furthermore, its low cost and fast switching speeds make it the perfect transistor for a variety of projects.

In conclusion, the MJD243T4 is a single transistor with a wide range of applications, from power, RF and general-purpose electronics to motor control, charge pumps and voltage regulators. Its high power dissipation capabilities, as well as its broad current gain and voltage range make it suitable for a selection of applications. Furthermore, its reliability and long life make it a reliable choice, while its low cost and fast switching speeds make it the ideal transistor for any project.

The specific data is subject to PDF, and the above content is for reference

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