MJD2955T4G Allicdata Electronics

MJD2955T4G Discrete Semiconductor Products

Allicdata Part #:

MJD2955T4GOSTR-ND

Manufacturer Part#:

MJD2955T4G

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 10A DPAK
More Detail: Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Su...
DataSheet: MJD2955T4G datasheetMJD2955T4G Datasheet/PDF
Quantity: 2500
2500 +: $ 0.15280
5000 +: $ 0.14226
12500 +: $ 0.14050
Stock 2500Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD2955
Description

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MJD2955T4G is a type of single bipolar junction transistor (BJT), specifically classified as PNP. It is manufactured by Motorola, Inc. and its most common application field is in power management and audio engineering. Due to its high switching speeds and low power consumption, it is increasingly becoming a popular component for these applications.

The basic working principle of a single bipolar junction transistor is the same as any other type of transistor; it relies on the movement of electrons between various layers of semiconductor material. The three distinct layers of semiconductor material comprise the base, the collector and the emitter. When a voltage is applied to these layers, electrons are drawn towards the emitter and the transistor is activated. This causes the remaining electrons in the base layer to move to the collector, completing the circuit.

The MJD2955T4G specifically is a multifunctional component, meaning it can be used to switch power from one component to another, to provide amplification and to regulate voltage levels. Specifically, this component features a higher-than-average collector current (also known as Ib), allowing for greater power level switching. As such, the MJD2955T4G is often chosen for applications requiring the highest levels of performance, such as distortion-free audio amplification.

In addition, the MJD2955T4G offers certain advantages over regular PNP transistors. Firstly, it has a very low-power dissipation of 0.295 W. This means that the component generates less heat and is therefore better suited to applications requiring accurate control of power levels. Moreover, the MJD2955T4G also offers a high switching speed of up to 25 MHz, meaning it can switch power quickly, thus reducing power loss.

To summarise, the MJD2955T4G is a type of single bipolar junction transistor, specifically classified as a PNP. Its most common application field is in power management and audio engineering, as it features a higher-than-average collector current as well as good power dissipation and switching speeds. Overall, the MJD2955T4G is an ideal component for many demanding applications and is increasingly being used for this purpose.

The specific data is subject to PDF, and the above content is for reference

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