MJD253T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJD253T4GOSTR-ND |
Manufacturer Part#: |
MJD253T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 4A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Su... |
DataSheet: | MJD253T4G Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 200mA, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 40MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD253 |
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The MJD253T4G is a transistor that falls into the category of bipolar junction transistors (BJT), which are a type of semiconductor device used for switching and amplification. Generally, BJTs are used to amplify electrical signals in a variety of different applications. This type of transistor is commonly used in low-noise amplifiers, audio amplifiers, high-frequency amplifiers, and many other types of amplifiers. It is usually used to switch signals between two or more electronic devices. This type of transistor has a variety of applications, ranging from computers to consumer electronics, due to its relatively low cost and small size.
The MJD253T4G is a single-stage BJT that consists of three terminals: the base, the collector, and the emitter. The MJD253T4G is a NPN type transistor, meaning that it contains a P-type semiconductor material between two layers of N-type semiconductor material. This arrangement allows the transistor to act as a switch by controlling the amount of current that is allowed to flow between the collector and emitter terminals. It works through the "majority carrier" principle, wherein an excess of electrons are injected over the base-emitter junction, which allows the base-collector junction to be "forward-biased," thereby allowing current to flow through it. This current is then amplified by the transistor so that it can be used in various applications.
In terms of its application field, the MJD253T4G is usually used in applications where low voltage and high current resistors are required. It is also used in applications where high power switching is needed due to its high collector current rating. Additionally, it can be used in various audio amplifiers, especially for low-noise applications due to its low noise capability. It can also be used in low-frequency RF amplifier applications. Furthermore, it can be used in high-speed switching applications such as DC-DC converters due to its high current gain and fast switching speed.
To conclude, the MJD253T4G is a single-stage NPN BJT and falls into the category of transistors. It is mainly used for amplification and switching applications due to its relatively low cost and small size. It has a variety of applications, ranging from computers to consumer electronics. Additionally, it is commonly used in low-noise amplifiers, audio amplifiers, high-frequency amplifiers, and many other types of amplifiers. Furthermore, it can be used in applications where high power switching is needed, as well as in audio, RF, and high-speed switching applications. The most important characteristics of the MJD253T4G include its high current gain, fast switching speed, and low noise capability.
The specific data is subject to PDF, and the above content is for reference
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