MJD210TF Discrete Semiconductor Products |
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Allicdata Part #: | MJD210TFTR-ND |
Manufacturer Part#: |
MJD210TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 5A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Sur... |
DataSheet: | MJD210TF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 45 @ 2A, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 65MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | MJD210 |
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MJD210TF is a type of single bipolar junction transistor (BJT). It is a kind of high-power and high-frequency transistor, which is used for frequency power amplifiers or switching circuit. It is also a very common type of NPN transistor used for many different applications.
MJD210TF is mainly used for power amplifier applications. It can be connected with a medium-power radio frequency driver for radio frequency power amplifier applications, or connected with a wide-band matching network for high-power air line communication applications. The high-power and high-frequency characteristics of this transistor make it suitable for use in switch mode power supply (SMPS) and many other high-frequency switching circuits. Other applications include various types of amplifiers, oscillators, motor control circuits, as well as various types of logic switching devices.
MJD210TF has good characteristics, such as high power gain, low saturation voltage, and high frequency capability. It can operate at frequencies up to 30GHz, making it suitable for RF radio systems, as well as for high-frequency switch mode power supply applications. The low voltage saturation also makes this transistor ideal for current amplification instead of voltage amplification.
The working principle of MJD210TF is fairly simple and straightforward. Like all bipolar transistors, it consists of three elements: the emitter, the collector, and the base. The base is connected to the emitter, which allows current to flow through the emitter-base junction. This current triggers the collector-base junction, producing a larger current in the collector. This amplified current can be used to switch other devices, such as relays, motors, and other power devices.
In addition to amplifying current, a single bipolar transistor such as MJD210TF can also be used to invert signals. When MJD210TF is forward-biased with its base connected to the collector, it can be used as an inverter to invert the signal. This reversed or inverted voltage can be used for many applications such as phase-locked loop circuits and audio amplifiers.
MJD210TF is advantageous for high power applications because of its high power gain and high frequency capability. It is also very useful for low voltage amplification applications, as it can amplify current without creating excessive noise in the circuit due to its low saturation voltage.
In summary, MJD210TF is a type of practical and versatile single bipolar junction transistor which has many applications, including RF amplifiers, SMPS, current amplification, signal inversion, and other applications. It has great characteristics such as high power gain and wide frequency capability, making it suitable for various applications.
The specific data is subject to PDF, and the above content is for reference
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