Allicdata Part #: | MJD2955-1G-ND |
Manufacturer Part#: |
MJD2955-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A IPAK |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Th... |
DataSheet: | MJD2955-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Base Part Number: | MJD2955 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MJD2955-1G Application Field and Working Principle of a Single Bipolar Transistor (BJT)
Bipolar transistors are a type of transistor commonly used in digital and analog circuits. A BJT is composed of multiple layers of p-type and n-type material, arranged as current sources and drains, separated by a semiconductor material. The transistors are used to amplify electrical signals and can switch between on and off states, which is why they are used in digital logic applications. The specific type of transistor discussed in this article is the MJD2955-1G. It is a single bipolar transistor used for very high voltage switching applications.Overview of the MJD2955-1G Bipolar Transistor
The MJD2955-1G is a single bipolar transistor used for extremely high voltage switching applications, and is suitable for lighting, motors and other automotive applications. It has an adjustable resistor between the collector and the base, allowing for simple and effective bias control for maximum circuit stability. The MJD2955-1G has an integrated collector-base breakdown voltage of 830V and emitter-base breakdown of 70V, making it suitable for high voltage switching operations. It also has a low power dissipation rate of 0.5W and a high power gain of 30.Applications of the MJD2955-1G
The MJD2955-1G can be used in a variety of applications, such as: * Motor drivers, relays, and actuator drivers * Automotive lighting, such as headlights and taillights * Fluorescent lamps, energy-saving lights, and other high voltage lighting applications * Dishwashers, air conditioners and other white goods * Solenoids and other low current actuatorsWorking Principle of the MJD2955-1G
The working principle of the MJD2955-1G is similar to that of other BJTs, with the addition of the adjustable resistor to control the bias of the transistor. The MJD2955-1G consists of 3 pins – the emitter, the base, and the collector. When a forward bias is applied between the emitter and the base, a small current flows from the base to the collector, which amplifies the signal. The current is amplified thanks to a phenomenon known as the “transistor effect”, which refers to the current flowing from the base to the collector as a result of the electric field created between the base and the collector.To ensure proper operation, the bias voltage between the collector and the base must be carefully controlled with the adjustable resistor. The voltage selectable resistor is adjusted to the desired bias voltage for the given application. Once the proper bias voltage is established, the transistor begins to operate. When the base receives a signal, it generates a current flow in the collector, which is amplified by a factor which is determined by the transistor effect. The amplified current is then used to drive the load as desired. This amplification of current allows the MJD2955-1G to operate as a switch, when the transistor is turned off and the current flow is stopped.Advantages of the MJD2955-1G
The MJD2955-1G has a number of advantages over other transistors, such as:* Higher voltage switching capability – up to 830V * Adjustable resistor for effective bias control * Low power dissipation rate – 0.5W * High power gain – 30 * Ability to switch quickly between on and off states * Suitable for a variety of applicationsConclusion
The MJD2955-1G is a single bipolar transistor used for very high voltage switching applications. It offers many advantages over other transistors, such as higher voltage switching capability, adjustable resistor for effective bias control, low power dissipation rate, and high power gain. The amplifier also offers the ability to switch quickly between on and off states, making it suitable for a variety of applications. Knowing the working principle and advantages of the MJD2955-1G can help designers to choose the right transistor for their unique application needs.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MJD2" Included word is 28
Part Number | Manufacturer | Price | Quantity | Description |
---|
MJD200T4 | ON Semicondu... | -- | 1000 | TRANS NPN 25V 5A DPAKBipo... |
MJD243T4 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 4A DPAKBip... |
MJD253T4 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 100V 4A DPAKBip... |
MJD200 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 5A DPAKBipo... |
MJD210 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 5A DPAKBipo... |
MJD210RL | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 5A DPAKBipo... |
MJD243 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 4A DPAK-3B... |
MJD253-001 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 100V 4A IPAKBip... |
MJD2955 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 10A DPAKBip... |
MJD2955-001 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 10A IPAKBip... |
MJD2955-1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 10A IPAKBip... |
MJD200T5G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 5A DPAKBipo... |
MJD253-1G | ON Semicondu... | 0.53 $ | 1000 | TRANS PNP 100V 4A IPAKBip... |
MJD29CTF | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 1A DPAKBip... |
MJD210RLG | ON Semicondu... | 0.18 $ | 1000 | TRANS PNP 25V 5A DPAKBipo... |
MJD200RLG | ON Semicondu... | 0.19 $ | 1000 | TRANS NPN 25V 5A DPAKBipo... |
MJD200T4G | ON Semicondu... | -- | 2500 | TRANS NPN 25V 5A DPAKBipo... |
MJD210TF | ON Semicondu... | -- | 1000 | TRANS PNP 25V 5A DPAKBipo... |
MJD2955T4 | STMicroelect... | -- | 1000 | TRANS PNP 60V 10A DPAKBip... |
MJD210T4G | ON Semicondu... | 0.14 $ | 7500 | TRANS PNP 25V 5A DPAKBipo... |
MJD2955TF | ON Semicondu... | 0.16 $ | 4000 | TRANS PNP 60V 10A DPAKBip... |
MJD2955T4G | ON Semicondu... | 0.16 $ | 2500 | TRANS PNP 60V 10A DPAKBip... |
MJD253T4G | ON Semicondu... | -- | 2500 | TRANS PNP 100V 4A DPAKBip... |
MJD210G | ON Semicondu... | 0.41 $ | 2136 | TRANS PNP 25V 5A DPAKBipo... |
MJD243T4G | ON Semicondu... | 0.2 $ | 10000 | TRANS NPN 100V 4A DPAKBip... |
MJD200G | ON Semicondu... | -- | 2014 | TRANS NPN 25V 5A DPAKBipo... |
MJD2955G | ON Semicondu... | 0.48 $ | 1224 | TRANS PNP 60V 10A DPAKBip... |
MJD243G | ON Semicondu... | 0.6 $ | 1105 | TRANS NPN 100V 4A DPAKBip... |
Latest Products
BC807-16W/MIX
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
CP547-MJ11015-CT
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
CP547-CEN1103-WS
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TIP35C SL
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
JAN2N3634
TRANS PNP 140V 1ABipolar (BJT) Transisto...
BULB7216-1
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...