MJD253-001

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 1V
Power - Max:	1.4W
Frequency - Transition:	40MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Base Part Number:	MJD253

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

MJD253-001 is a type of single bipolar junction transistor (BJT) which is widely used in various applications. The basic structure of the MJD253-001 is three-terminal devices composed of an emitter, a base, and a collector. It is manufactured through advanced semiconductor technologies, allowing it to provide high performance as well as higher reliability and stability.

Working Principle

The working principle of the single bipolar junction transistor (BJT) is based on the fact that when current flows through the base and collector region, it will induce a strong electric field, which in turn will form a potential barrier between the base and collector region. When the potential barrier is formed, the electrons can pass through it and the current can flow to the collector region, thereby amplifying the input current. This process is known as “transistor action”. The transistor also has an emitter region which supplies electrons to the base region through a current when there is a bias voltage. The current that flows from the emitter region to the base region is known as the “input current”. The input current is usually very small compared to the output current of the device. Thus, the MJD253-001 amplifies the input current and produces an amplified output current which is then used in various applications.

Application Field

MJD253-001 is used in a wide variety of electronic circuits and applications such as radio frequency amplifiers, oscillators, analogue circuits, digital circuits, power electronic circuits, audio amplifiers and many more. It is widely used in various applications due to its low cost, ease of use, and high performance. MJD253-001 is extensively used in radio circuits, mainly for the amplification of weak signals. It is also commonly used in audio power amplifiers, where the output power of an audio system is increased. Furthermore, it is widely used in the manufacturing of switching circuits, regulators, clippers, and clampers. MJD253-001 is also widely used in power electronics, such as motor control, power converters, inverters, and power amplifiers. It is usually used as a switch to control the input/output stage of a power inverter, as well as for voltage regulators. Finally, it is also used as a temperature sensor in temperature control systems, as well as for other applications such as speed control and switching circuits.

Conclusion

MJD253-001 is a single bipolar junction transistor which is commonly used in various applications due to its low cost, ease of use, and high performance. It is widely used in various electronic circuits, such as radio frequency amplifiers, oscillators, analogue circuits, digital circuits, and power electronic circuits. Additionally, it is used in audio amplifiers, switching circuits, regulators, temperature sensors, and many more.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description