MMST5401-7-F Allicdata Electronics
Allicdata Part #:

MMST5401-FDITR-ND

Manufacturer Part#:

MMST5401-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 150V 0.2A SC70-3
More Detail: Bipolar (BJT) Transistor PNP 150V 200mA 300MHz 200...
DataSheet: MMST5401-7-F datasheetMMST5401-7-F Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMST5401
Description

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The MMST5401-7-F is a surface mount NPN transistor from the family of single bipolar junction transistors (BJT). This transistor belongs to the widely used MMBT3904 family of discrete switching and amplifying transistors. The MMST5401 is designed to provide good performance for low-voltage, low-power applications. It has a very low saturation voltage making it an ideal choice for use in battery-powered devices. It can also be used in sensitive control circuits where very low on currents are required.

The MMST5401-7-F comes in a SOT-23 surface mount package. It is rated to handle collector currents up to 200mA and base currents of up to 50mA with a collector-to-emitter voltage of 50V. It has a wide range of usable frequencies, making it a suitable choice for use in a variety of digital and analog electronic circuitry. It also has excellent power dissipation properties and is capable of switching quickly to maximize power efficiency.

The single BJT works on the principle of providing a gain in voltage when a small current is supplied to the base of the transistor. This small current creates an amplified current that passes from source to sink. A single BJT has two PN junction diodes. One diode is between the base and collector, and the other is between the base and emitter of the transistor. When a positive voltage is applied to the base of the transistor, the two diodes junctions become forward biased and allow current to flow through the emitter-base junction. This current is called the base current.

The MMST5401-7-F transistor has a wide range of uses in different applications. It can be used as a switch in logic circuits, amplifying signals in audio-frequency circuits, and in push-pull applications such as in DC-DC converters. Additionally, it can be employed in automotive applications, motor control, power management devices, and lighting applications to name a few. It also has potential use as a low-noise amplifier due to its low saturation voltage and low noise figure.

The MMST5401-7-F is an excellent choice for a wide variety of low-voltage, low-power applications due to its superior performance, small footprint surface mount package, and excellent power efficiency. This transistor has been designed to provide reliable performance for all types of applications. Its wide range of usable frequencies makes it suitable for many types of digital and analog circuitry. Additionally, its excellent power dissipation properties and low saturation voltage offer power savings and reliability to the user.

The specific data is subject to PDF, and the above content is for reference

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