MMST4126-7 Discrete Semiconductor Products

Introduction

MMST4126-7 (also known as mesa enhanced low VCEsat) is an infrared power transistor designed for demanding applications that require high wattage. It offers superior electrical and thermal performance thanks to its optimized layout, bipolar processing technologies and high-temperature solderable leads.

Application Field

The MMST4126-7 is a single transistor device with excellent power characteristics. It is suitable for a variety of applications, including motor speed controllers, lighting control systems, power amplifiers, and switching mode power supplies. Its low saturation voltage and high gain makes it an ideal choice for high-current and high-power applications. It can also be used in other applications such as switch-mode power supplies, motor controllers, and high-efficiency charging systems.

Working Principle

The MMST4126-7 uses a combination of bipolar junction transistor (BJT) technology and mesa processing to achieve high efficiencies and superior electrical characteristics. The device is manufactured using a process where two gates and two collectors are formed in the same bipolar package. This configuration allows for power amplification with low voltage drop. The two collectors consist of two transistors connected in series, with each one having its own base. The two bases can be connected in either parallel or series, as required. The transistor is also configured in such a way that it can handle voltage ratings up to 100 volts and power ratings up to 30 watts.

The MMST4126-7 includes a number of advanced features that make it an attractive choice. It includes an integrated reverse polarity protection, allowing it to withstand high voltages without damage. It also includes an adjustable under-voltage lockout, which prevents the devices from operating below the specified voltage. This feature is especially useful in high-power applications, where it can help maximize the efficiency of the device.

The MMST4126-7 also includes an on-chip temperature protection, which can monitor the temperature of the device and shut it down in extreme cases. This feature prevents the device from becoming excessively hot, thus preventing it from becoming damaged by excessive heat.

Conclusion

The MMST4126-7 is an innovative bipolar transistor designed for high-power and high current applications. It offers excellent performance, including low voltage drop and high gain. Its mesa enhanced layout and integrated features make it an ideal choice for applications requiring high wattage and superior electrical performance.