Allicdata Part #: | MMST4124DITR-ND |
Manufacturer Part#: |
MMST4124-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 0.2A SC70-3 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 200m... |
DataSheet: | MMST4124-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | MMST4124 |
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MMST4124-7 is a type of bipolar junction transistor (BJT). It is a single-chip, surface-mounted device that is widely used in a variety of applications. It is highly reliable, efficient and cost-effective, and it is able to provide reliable, stable and cost-effective performance.
The MMST4124-7 is a three-terminal device, with a base, collector, and emitter. The collector is the output or load connection, while the base and emitter serve as the input. Its structure consists of a thin layer of semiconductor material, most often made from silicon, in between two metal contacts called the base and the collector. In addition to the three terminals, it also has a fourth terminal for connecting a protective diode. This diode can protect the transistor from reverse-voltage and other potentially damaging voltages.
In the MMST4124-7, the base is exposed to a positive voltage to trigger the flow of current. This causes the current to enter the base region, which is made up of n-type (negative) material. As this current flows through the base region, it produces an electric field that causes electrons to be “pushed” into the collector region, which is also made of n-type material. The collector region is connected to the output circuit, and the current can then flow through it.
The MMST4124-7 can be used in many different applications. It can be used as a switch in electronic circuits to control the flow of current, or as an amplifier. It can also be used to regulate voltage and current. It is often used in power amplifier circuits to increase the power output of a given circuit, and in generally in any application where a control signal needs to be converted into a large current or voltage level.
The working principle of the MMST4124-7 is based on the transistor action. When a small current is allowed to flow through the base material, this causes a larger current to be able to pass through the collector and emitter regions. This is known as the “amplification” effect of the transistor. The amount of current that flows through the collector and emitter is determined by the base current.
The amount of current that can be handled by the MMST4124-7 is relatively limited compared to other similar devices. It can carry a maximum of 200 mA, with a peak rating of 400 mA. It has a voltage rating of 50 volts and a current gain of 12.
In conclusion, the MMST4124-7 is a single-chip, surface-mounted bipolar junction transistor that is highly reliable and cost-effective. It is used in a wide range of applications for its ability to convert control signals into current and voltage levels. Its working principle is based on transistor action, and it has a maximum current rating of 200 mA, a peak rating of 400 mA, and a current gain of 12.
The specific data is subject to PDF, and the above content is for reference
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