| Allicdata Part #: | MMST4401-FDITR-ND |
| Manufacturer Part#: |
MMST4401-7-F |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS NPN 40V 0.6A SC70-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200m... |
| DataSheet: |  MMST4401-7-F Datasheet/PDF |
| Quantity: | 18000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
| Power - Max: | 200mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
| Base Part Number: | MMST4401 |
Description
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MMST4401-7-F is one of a series of transistors manufactured by a leading semiconductor manufacturer. This device falls into the category of Bipolar (BJT) Single transistors and is designed for use in communication and consumer electronic products. The device is a low voltage low power device and is suitable for use in low power applications.
The device has a maximum collector current of 500mA and a maximum DC Collector-Emitter voltage of 50V. It has a minimum current gain of 100 and a minimum breakdown voltage of 60V. The package type is a surface mount package with a metal can.
The MMST4401-7-F is typically used in medium to low power applications such as hearing aids, medical and automotive applications. It is also suitable for use in consumer electronics products such as portable radios and cell phones.
The device is versatile and can be used in a variety of circuits. It is typically used as a switch in low power circuits, as an amplifying device, or as an oscillator. The device can also be used in power applications as an error amplifier or a linear regulator.
The working principle of MMST4401-7-F is that electrons flow through the three layers of the semiconductor. The three layers are the emitter, the base, and the collector layers. When positive voltage is applied to the base area, electrons are allowed to flow between the emitter and collector layers. This allows current to flow through the transistor, providing amplification.
The device also has an associated on resistance. In order to operate the transistor in its linear range, the resistance of the emitter must be adjusted. This can be done by either changing the physical size of the emitter area or by varying the emitter voltage.
In summary, MMST4401-7-F is a low voltage low power transistor for use in a variety of applications. It is suitable for use in medium and low power applications such as hearing aids, medical devices, automotive applications, and consumer electronics. The device has a maximum collector current of 500mA and a maximum DC Collector-Emitter voltage of 50V. It has a minimum current gain of 100 and a minimum breakdown voltage of 60V. The working principle is that electrons flow through the three layers of the semiconductor when positive voltage is applied to the base area.
The device has a maximum collector current of 500mA and a maximum DC Collector-Emitter voltage of 50V. It has a minimum current gain of 100 and a minimum breakdown voltage of 60V. The package type is a surface mount package with a metal can.
The MMST4401-7-F is typically used in medium to low power applications such as hearing aids, medical and automotive applications. It is also suitable for use in consumer electronics products such as portable radios and cell phones.
The device is versatile and can be used in a variety of circuits. It is typically used as a switch in low power circuits, as an amplifying device, or as an oscillator. The device can also be used in power applications as an error amplifier or a linear regulator.
The working principle of MMST4401-7-F is that electrons flow through the three layers of the semiconductor. The three layers are the emitter, the base, and the collector layers. When positive voltage is applied to the base area, electrons are allowed to flow between the emitter and collector layers. This allows current to flow through the transistor, providing amplification.
The device also has an associated on resistance. In order to operate the transistor in its linear range, the resistance of the emitter must be adjusted. This can be done by either changing the physical size of the emitter area or by varying the emitter voltage.
In summary, MMST4401-7-F is a low voltage low power transistor for use in a variety of applications. It is suitable for use in medium and low power applications such as hearing aids, medical devices, automotive applications, and consumer electronics. The device has a maximum collector current of 500mA and a maximum DC Collector-Emitter voltage of 50V. It has a minimum current gain of 100 and a minimum breakdown voltage of 60V. The working principle is that electrons flow through the three layers of the semiconductor when positive voltage is applied to the base area.
The specific data is subject to PDF, and the above content is for reference
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