Allicdata Part #: | MMST5401DITR-ND |
Manufacturer Part#: |
MMST5401-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 150V 0.2A SC70-3 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 200mA 300MHz 200... |
DataSheet: | MMST5401-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | MMST5401 |
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The MMST5401-7 is a single bipolar junction transistor (BJT) with a small surface mount form factor. As a high-speed switching transistor, it can operate at frequencies up to 3 GHz and offers a wide range of voltage options for a variety of circuit applications. By offering both high gain and fast switching capabilities, the MMST5401-7 is widely used in products such as power amplifiers, automotive radio systems and switching power converters, making it an ideal choice for a range of applications.
The MMST5401-7 uses a simple three-terminal package with a base, collector, and emitter. It works by the transistor modulating and amplifying the emitter current. By applying voltage between the base and emitter, the current between the two increases proportionally and generates a voltage which is boosted by the collector-emitter junction. This process is known as the transistor action, in which the controlled current is used as the power amplifier output.
The MMST5401-7, with its high speed and efficiency, is often used in high-frequency, low-noise, high-gain applications such as power amplifiers, switched mode power converters, and radio frequency (RF) amplifiers. It is also used for switching power circuits such as the Cascaded Multi-Level Converters. The MMST5401-7 has low capacitance and low leakage current making it an ideal choice for high-speed applications, where minimal power loss is essential.
The MMST5401-7 can operate at frequencies up to a maximum of 3 GHz and can handle input voltages up to 50 V. This makes it an ideal choice for RF amplifier applications. The low on-state voltage drop is also beneficial in these applications, as it reduces the amount of energy required to drive the amplifier. Additionally, the device’s high-gain bandwidth product ensures that it can respond quickly to changes in the input signal.
The MMST5401-7 is also used in switching power supply circuits, such as Cascaded Multi-Level Converters (CMC). Due to its ability to handle higher input voltages, it is well suited for use in these applications. The low leakage current and low capacitance of the device allow for efficient power delivery and fast switching speeds, which are necessary for effective power supply designs.
In addition, the MMST5401-7 can also be used in automotive radio systems. Its high speed makes it an ideal choice for these applications, as it can quickly and accurately process audio signals. The device’s high gain and wide voltage range ensure that it can accurately and reliably process audio signals, even in noisy environments. Furthermore, the MMST5401-7 features low thermal resistance, which ensures that it can stay cool in high-temperature conditions and remain reliable.
The MMST5401-7 is a versatile and reliable single bipolar junction transistor. It offers a wide range of voltage options for a variety of circuit applications, with efficient power delivery and fast switching speeds. In addition, it is well suited for use in high-frequency, low-noise, and high-gain applications, as well as automotive radio systems. As a result, it has become a popular choice among circuit designers, providing them with a reliable and versatile transistor for their designs.
The specific data is subject to PDF, and the above content is for reference
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