MMST5551-TP

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	160V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	200mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	MMST5551

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Introduction to MMST5551-TP

The MMST5551-TP is a transistor that is classified as a single, bipolar (BJT) transistor. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) that is specially designed for power supplies and applications in harsh environments, such as those found in industrial, automotive and military applications. It has a very low on-resistance and is designed to switch high currents up to 1.5A in either polarity.

Application Fields

The MMST5551-TP is widely used in industrial, automotive, and military applications. In industrial applications, it can be used to control power supplies or as a switch or gate driver for high current applications. In automotive applications, it can be used as a motor controller or as a switching device for ignition systems. In military applications, it can be used as a switch or gate driver in communication systems, radar systems, and other sensitive operations.

Working Principle

The working principle of the MMST5551-TP is based on the same principle as that of an n-channel MOSFET. It consists of an n-type channel that is surrounded by three terminals. The gate terminal is used to control the flow of current between the source and drain terminals. When the gate voltage is applied, it pulls the channel\'s charge carriers away from the channel, thereby allowing current to flow from the source to the drain. When the gate voltage is removed, the charge carriers will be attracted back to the channel, closing the channel and blocking current flow between the source and drain terminals. This process is known as "gating” and it is the basic principle of operation of the MMST5551-TP.

Advantages of MMST5551-TP

The MMST5551-TP has the following advantages over other types of transistors:• It has a very low on-resistance and requires minimal gate current for operation.• It is capable of switching high currents up to 1.5A in either polarity.• It is designed for power supplies and applications in harsh environments.• It is cost effective and easy to use.• It is less prone to latch up problems and can operate at higher speeds.• It is well-suited for automotive and military applications.

Conclusion

The MMST5551-TP is a single, bipolar (BJT) MOSFET transistor that is specifically designed for power supplies and applications in harsh environments. It has a very low on-resistance and is capable of switching high currents up to 1.5A in either polarity. It also offers a number of advantages over other types of transistors, such as lower costs, higher speeds and greater stability. As such, it is well-suited for industrial, automotive and military applications.

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