MMST6427-7-F Allicdata Electronics
Allicdata Part #:

MMST6427-FDITR-ND

Manufacturer Part#:

MMST6427-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 40V 0.5A SC70-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 40V 500m...
DataSheet: MMST6427-7-F datasheetMMST6427-7-F Datasheet/PDF
Quantity: 3000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMST6427
Description

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MMST6427-7-F is an NPN single bipolar transistor created and manufactured by the company Fairchild Semiconductor. It is often utilized in low power general purpose amplifier and switching applications. It is capable of withstanding a power dissipation of 300mW and a 50V collector-base breakdown voltage.

MST6427-7-F has a variety of different characteristics, such as its current rating of 1.5A. It also has a maximum collector-base voltage of 50V and a collector-emitter voltage of 45V. Its Collector-base capacitance is only 14.6 pF, meaning it can handle high frequency applications. The maximum operating temperature of this device is 150° C.

The MMST6427-7-F bipolar transistor features a low power dissipation of 300mW and is great for general-purpose switching applications. The low cost of this transistor can make it an attractive option for many power-sensitive designs. The MMST6427-7-F is also optimized to operate at elevated temperatures. This makes it perfect for consumer applications, such as portable electronics.

At the heart of the MMST6427-7-F device is the bipolar junction transistor (BJT). This type of transistor is made up of three semiconductor layers, a base, a collector, and an emitter. The base and collector layers are created from a p-type material, while the emitter is made from an n-type material. A voltage applied to the base layer will control the current flowing between the collector and the emitter layers. This current, in turn, will control the amount of power being dissipated by the transistor.

The MMST6427-7-F also utilizes a built-in protection feature, allowing the device to protect itself against over-current conditions. This feature prevents the device from becoming excessively hot, and in some cases, even burning out. In addition, the MMST6427-7-F features a maximum collector-base breakdown voltage of 50V, providing the device with even more protection.

Overall, the MMST6427-7-F is a great cost-effective choice for many low-power, general-purpose switching applications. It has a low power dissipation and can handle high frequency signals. Furthermore, it is capable of withstanding over-current conditions and performing in elevated temperatures. These characteristics make the MST6427-7-F an invaluable tool for consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference

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