MMSTA14-7 Allicdata Electronics
Allicdata Part #:

MMSTA14DITR-ND

Manufacturer Part#:

MMSTA14-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 30V 0.3A SC70-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 300m...
DataSheet: MMSTA14-7 datasheetMMSTA14-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMSTA14
Description

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The MMSTA14-7 is a bipolar junction transistor (BJT) designed for use in a variety of applications. This type of device is commonly used in power amplifiers, power switching circuits, and audio amplifiers due to their large dynamic range and the fact that they allow for lower noise levels compared to other transistor types. This particular model is crafted from a bipolar silicon-nitride metal-oxide-semiconductor field-effect transistor (MOSFET), making it a highly reliable device for various applications.

For operation, the MMSTA14-7 requires three main terminals: the base terminal (B), the emitter terminal (E), and the collector terminal (C). The base terminal controls current flow by accepting input signals from either a switching or amplifying circuit. The emitter terminal is the output point for the combined current of both the base and collector terminals. In some cases, a resistor is added between the emitter and collector terminals to ensure that it can accurately handle charge. Finally, the collector terminal is the output of the amplified signals and connects to the device being operated.

Because of its single transistor structure and low power consumption, the MMSTA14-7 is capable of providing high power-handling capabilities and is ideally suited for use in high-speed switching circuits that require stable current control. Additionally, it features fast switching speeds and good response times, which enables it to be used for digital and analog signal processing, as well as for output stages in modulated power amplifiers. As a result, it is a popular device for a wide range of applications and is also frequently used in audio and video equipment.

Due to its wide variety of applications and its high performance capabilities, the MMSTA14-7 is a widely used transistor in both commercial and industrial products. As such, it is necessary to understand its working principle in order to ensure that it is properly utilized. In general, the MMSTA14-7 works by allowing current to flow through its internal transistor structure according to the input signals applied to its base terminal. The base then acts as a control point between the emitter and collector terminals and regulates the current flow of the device. The device is able to handle large currents as the electric charge is shared between the collector and emitter terminals.

The MMSTA14-7 can also be used in complementary circuits, in which two transistors are connected in reverse polarities, but share the same current. In this configuration, the transistors will alternate between output and non-output modes, which enable them to minimize power losses. By connecting multiple transistors in this way, a more effective circuit can be created for better performance, efficiency and control.

Due to its excellent features and capabilities, the MMSTA14-7 is a popular choice for many different electronic applications. Furthermore, it is also available in a variety of package styles and can be easily tailored to any specific circuit design. As such, the MMSTA14-7 is an ideal transistor for use in a wide range of applications and offers superior performance, efficiency and reliability when compared to other single transistor devices.

The specific data is subject to PDF, and the above content is for reference

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