MPS6521G Allicdata Electronics
Allicdata Part #:

MPS6521GOS-ND

Manufacturer Part#:

MPS6521G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.1A TO92
More Detail: Bipolar (BJT) Transistor NPN 25V 100mA 625mW Thro...
DataSheet: MPS6521G datasheetMPS6521G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: MPS6521
Description

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MPS6521G is a kind of transistor, classified as a single Bipolar Junction Transistor (BJT). This kind of transistors is notable thanks to its wide range of applications, as it is easy to install and delivers a great level of performance.

This transistor is designed to be used in amplifiers, signal modulators and signal amplifiers, as well as in the fields of signal generators, signal repeaters and signal mixers.

The MPS6521G has a base-emitter voltage rating of 60V and a collector-emitter voltage rating of 60V. It has a emitter current of 200mA and a collector current of 50mA, with a voltage of -2V. This transistor also has a 200 mW power dissipation rating and a maximum frequency of 80 MHz.

The MPS6521G is composed of three layers: the Base layer, the Collector layer, and the Emitter layer. The Base is the layer responsible for receiving and transferring the electrical signals, the Collector is the layer that collects the energy released from the Emitter and transfers it out of the circuit, and the Emitter is the layer that releases the energy that is collected by the Collector.

The Base layer works as follows: an input signal is received by the Base, which is then amplified. The amplified signal is sent to the Collector layer, which acts as a filter, filtering out the undesired part of the signal and only the desired is left. Finally, the filtered signal is sent to the Emitter layer, which transfers the power out of the circuit, resulting in an amplified signal.

Additionally, Maxwell’s equations provide us with the formula for predicting the current flow within the MPS6521G. These equations describe the movement of an electric current within a closed circuit, through the attributes of resistance, inductance and capacitance. This electric current is described by a series of differential equations.

The MPS6521G is generally used in applications where high gain, low noise and low power consumption are needed. Furthermore, the MPS6521G is used in high frequency switching, linear amplification and power conversion. For example, it is used to boost the gain in vacuum tubes, as well as to provide feedback when used in high-gain amplifiers.

Perhaps one of the most interesting applications of the MPS6521G is in the field of robotics. Specifically, this transistor is commonly used to control robot servos. The MPS6521G is a great choice due to its low power consumption, which allows robots to operate for extended periods of time. Additionally, it provides a great level of accuracy and reliability, which makes it ideal for controlling robotic servos.

The MPS6521G is a great choice for a wide variety of applications. It is inexpensive, easy to install, and offers great performance in terms of signal amplification, power conversion, gains boosting and robotic servo control. The key to its success lies in the combination of Maxwell’s equations and its three-layer setup, allowing it to deliver the desired performance without consuming too much energy.

The specific data is subject to PDF, and the above content is for reference

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