Allicdata Part #: | MPS6513_D74Z-ND |
Manufacturer Part#: |
MPS6513_D74Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 200mA 625mW Thro... |
DataSheet: | MPS6513_D74Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 2mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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MPS6513_D74Z application field and working principle
MPS6513_D74Z is a transistor under the category Transistors – Bipolar (BJT) – Single. It is a PNP silicon epitaxial transistors with high DC current gain, hFE which ranges from 400 to 900. It offers medium current handling capability with a maximum collector current rating of 150mA, as well as a voltage drop of 1.5V at 4mA. The transistor is encapsulated in a RO-CSP package with four pins.
Application Field
MPS6513_D74Z is capable of meeting the requirements ofsmall area, low power and high current amplifier, switching andsensing applications. It is widely used in fields like digital outputs,analog switch and biasing applications, as well as digital signalprocessing and feature control. It is suitable for applications likeinterfacing with CMOS/TTL logic, low level switching, analogswitching, input/output protection and pulse generation. Its smallpackage size makes it suitable for portable electronics, automobileelectronics and handheld devices.
Working Principle
MPS6513_D74Z is a PNP transistor, which means its base is connected to its emitter, while the emitter is connected to the ground. When a small current is applied to the base, it allows a large current to flow through the collector and emitter, resulting in the desired amplified current flow. The current gain of the transistor is determined by the level of current applied to the base. When the current applied is lower than the original level, the current passing through the collector and emitter decreases, leading to a diminished amplification. To maintain a constant flow, the base current needs to be adjusted.
Conclusion
MPS6513_D74Z is a PNP silicon epitaxial transistor with high DC current gain and a voltage drop of 1.5V at 4mA. It is used in small area, low power and high current amplifier, switching and sensing applications, like digital outputs, analog switch and biasing applications, digital signal processing and feature control. The principle of its operation is based on the fact that when a small current is applied to the base, it allows a large current to flow through the collector and emitter, resulting in amplified current flows.
The specific data is subject to PDF, and the above content is for reference
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