MPS6729G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 250mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 250mA, 1V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)

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MPS6729G is classified as Transistors - Bipolar (BJT) - Single.
MPS6729G is a low voltage, low power, low noise and low gate charge P-Channel enhancement mode MOSFET which is specifically designed for automotive devices. It offers fast switching, high peak current and excellent RDS(ON) and gate charge characteristics. The dimensions and profiles of the package are optimized to provide a low profile and small size, making the device ideal for mobile devices.
MPS6729G Application Field
MPS6729G is widely used in a ranging of different applications including:

• Automotive Battery Management Systems (BMS)
• Automotive HVAC
• Automotive On-board Chargers (OBC) and Automotive Airbags
• Automotive Accessories and Trailer Applications
• Industrial Electronics
• LED Lighting, Power Supplies and Motor Controllers
• White goods, Home Appliances and Mobile Device

MPS6729G Working Principle
MPS6729G works by utilizing p-channel MOSFETs, a type of transistor, which acts as an active electronic switch during an incoming signal. This allows a low side switch to turn devices on and off, controlling their visibility and functioning in a particular electronic circuit. The transistor is designed to switch its drain-source voltage when its gate voltage is changed in a certain fashion. This allows it to quickly turn on and off devices with the signal. Thus, it can control the amount of power delivered to the specific devices in a given circuit.
A basic MPS6729G Application consists of three terminals, which make up its drain (D), gate (G) and source (S). When a voltage is applied to gate, the diode between drain and source breaks down and drain-source current start to flow. MOSFETs do not require any collector or base as a current controlling element, allowing them to draw less current and work faster. As the drain-source voltage is being applied, the transistor will start to conduct and will channel its current to the device being controlled. This current is controlled by the amount of voltage applied to its gate.
In conclusion, the MPS6729G is a low voltage, low power, low noise and low gate charge transistor specifically designed for automotive applications. It offers fast switching, high peak current and excellent RDS(ON) and gate charge characteristics. It can be used for a plethora of different applications, making it an ideal component for automotive, industrial electronics, LED lighting, power supplies, motor controllers, white goods and mobile devices.

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