MPS6651G Allicdata Electronics
Allicdata Part #:

MPS6651G-ND

Manufacturer Part#:

MPS6651G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 1A 100MHz 625mW T...
DataSheet: MPS6651G datasheetMPS6651G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The MPS6651G is a single bipolar junction transistor (BJT). A BJT is a solid-state electronic device that is used as an amplifier. It is composed of three terminal regions, base, collector and emitter, surrounded by same semiconductor material. A BJTs are used in many electronic devices and circuits. Because of their simple construction and the fact that they are quite affordable and versatile, they are the most common type of transistor.

The MPS6651G is a PNP device which is basically a reverse biased transistor. The collector-base junction of this transistor is forward biased, while the emitter-base junction is reverse biased. This is important to understand, as it determines how the transistor will behave when used in an electrical circuit. When current is applied to the base, a small current flows from the collector to the emitter, resulting in a voltage drop across the transistor. This voltage drop is what amplifies the input signal. The base current determines the Collector-Emitter voltage, and the current gain, known as the h parameters, determines the relationship between the base current and the collector current.

The most common application for this type of transistor is audio amplification. It is used to amplify analog audio signals and can provide a wide range of gains. It is also often used for digital logic applications where a low voltage signal can be passed to a component with a much higher voltage without the risk of damaging the component. The MPS6651G is also used in precision instrumentation, medical equipment, aerospace and military applications where it can provide controlled and accurate current gain.

The MPS6651G is also used in radio frequency (RF) amplifiers. It is well suited for RF amplifier designs due to its high gain and low noise performance. It is often used in radio transmitters where it is used to amplify the radio signal before it is sent out over the air. It can also be used in RF receiver circuits where it is used to amplify a weak incoming signal.

It can also be used in power circuits where it can provide switching and amplification of large signals. The MPS6651G is used in power supply circuits, power management applications and power inverters, where it is used to provide adequate control and current gain for these applications. It is also used in mobile phone circuitry, where it is used to provide noise cancellation, power control and digital signal processing.

The MPS6651G is a versatile transistor that can be used in many different electronic applications. It is a reliable and cost-effective way to provide current gain and switching action for many different applications. This transistor’s simple construction and good performance make it a very useful device to have in a designer\'s toolbox.

The specific data is subject to PDF, and the above content is for reference

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