MRF10502 Allicdata Electronics
Allicdata Part #:

1465-1142-ND

Manufacturer Part#:

MRF10502

Price: $ 233.63
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANS NPN 500W 1025MHZ-1150MHZ
More Detail: RF Transistor NPN 65V 29A 500W Chassis Mount 355J...
DataSheet: MRF10502 datasheetMRF10502 Datasheet/PDF
Quantity: 1000
20 +: $ 212.39500
Stock 1000Can Ship Immediately
$ 233.63
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 9dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 29A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 355J-02
Supplier Device Package: 355J-02, STYLE 1
Description

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MRF10502 is a very popular NPN silicon epitaxial-base transistor used in various electronic and radio-frequency circuitry. Its application field usually covers VHF and UHF bands up to 350 MHz, specifically designed for FM and TV tuners, receivers, transmitters and amplifiers. Additionally, it can also be used as buffer, oscillator, and internal switch.

The basic principle of MRF10502 is that the collector current, IC, is controlled by the base current, IB. When an input signal current flows into the base of the transistor, it controls the amount of collector current that can flow from the collector to the emitter of the transistor. This is known as the amplification action. As the base current is increased, the collector current also increases, allowing more current from the collector to the emitter. This makes the MRF10502 transistor very suitable for use in RF applications.

MRF10502 also has a typical RF gain of up to 28 dBm, a collector to emitter breakdown voltage of 50V, and a capacitance of 0.6 pF. The transistor also features an HFE of 500 min, an FT of 3.6 MHz, and a VBF of 1.15V. Furthermore, it has a thermal resistanceof 4C/W, a noise figure of 3.5 fTVR, and an input resistance of 0.3 Ohms.

There are different ways to connect MRF10502 transistors, depending on the type of circuit it is being used in. For example, in a common-emitter circuit, the transistor is connected in a way that its base is connected to the input voltage, its emitter is connected to the ground, and its collector is connected to the output load. In a common-collector circuit, its emitter is connected to the input voltage, its collector is connected to the ground, and its base is connected to the output load. In a common-base connection, its collector is connected to the input voltage, its base is connected to the ground, and its emitter is connected to the output load.

In general, the MRF10502 is a versatile semiconductor device with a wide range of applications in radio-frequency applications. It is small, durable, efficient, and its high gain makes it well suited for applications such as FM and TV tuners, receivers, transmitters, and amplifiers. Moreover, its low cost and wide availability make it one of the most popular transistors for RF applications.

The specific data is subject to PDF, and the above content is for reference

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