Allicdata Part #: | 1465-1149-ND |
Manufacturer Part#: |
MRF140 |
Price: | $ 55.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 65V 150MHZ 211-11 |
More Detail: | RF Mosfet N-Channel 28V 250mA 30MHz ~ 150MHz 6dB ~... |
DataSheet: | MRF140 Datasheet/PDF |
Quantity: | 19 |
1 +: | $ 50.00940 |
10 +: | $ 46.97970 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 30MHz ~ 150MHz |
Gain: | 6dB ~ 15dB |
Voltage - Test: | 28V |
Current Rating: | 16A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | 211-11, Style 2 |
Supplier Device Package: | 211-11, Style 2 |
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MRF140 application field and working principle
The MRF140 Silicon N-channel radio-frequency (RF) power transistor from the company NXP Semiconductors is a high-power device that is used in applications requiring high output power and efficiency, such as in cellular tower base stations, cellular handsets, Wi-Fi, GPS, UMTS, Bluetooth, and satellite applications. The MRF140 is specifically designed for high-power operation over a broad temperature range and designed to operate in a frequency range of up to 6 GHz. The device is rated for a maximum output power of 80W and has excellent thermal performance, making it the ideal choice for high-power high-efficiency applications.
The MRF140 is a specialized type of field-effect transistor (FET) known as a Metal Oxide Semiconductor FET (MOSFET). It has an internal structure consisting of several layers of metal and insulator materials that form a channel between two terminals (source and drain). A field effect (usually from a voltage applied to a third terminal, the gate) can alter the amount of charge that flows between the source and drain. This change in current determines the output from the device.
The key feature of the MRF140 is its high-power capability, due to its high-voltage rating (20V) and the 28 millimeter die-cast package that allows for greater heat dissipation. The high-voltage rating enables higher transistor gain, allowing the MRF140 to produce greater power than other transistors. The device also has excellent characteristics when used in pulsed applications, such as those used in cellular towers and base stations.
The MRF140 is capable of producing high power and high efficiency in a variety of applications. Its ability to produce large amounts of power with low heat dissipation makes it ideal for medium-sized base station amplifiers and transmitters. In cellular handsets, the MRF140 can be used for transmit-receive modules, as well as for power amplifiers. In GPS and Wi-Fi, the device can be employed for high-efficiency linear or power amplifiers. In Bluetooth and UMTS applications, the transistor can be used for receivers and low-noise amplifiers.
The MRF140 is a specialized device designed to provide high performance and reliability in a wide variety of RF applications. Its high-voltage rating, thermal performance, and power capability make it a popular choice for high-power applications. Its application range is wide, including base station amplifiers, transmit-receive modules, and power amplifiers in cellular handsets, as well as amplifiers for use in WiFi, GPS, Bluetooth, and UMTS applications.
The specific data is subject to PDF, and the above content is for reference
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MRF1.6/5.6-BCUPA | Hirose Elect... | 24.54 $ | 1000 | CONN ADAPT PLUG-PLUG MRF1... |
MRF1.6/5.6-LPJ-179U | Hirose Elect... | 0.0 $ | 1000 | CONN 1.6/5.6 JCK R/A 75OH... |
MRF1.6/5.6-AP-59U | Hirose Elect... | 0.0 $ | 1000 | CONN 1.6/5.6 PLG STR 75OH... |
MRF1.6/5.6-LR-PC-1(40) | Hirose Elect... | 11.3 $ | 10 | CONN 1.6/5.6 RCPT R/A 75 ... |
MRF1.6/5.6-PJ-59U | Hirose Elect... | 14.05 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1.6/5.6-PJ-179U | Hirose Elect... | 14.05 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1.6/5.6-LR-PC-1 | Hirose Elect... | 14.71 $ | 1000 | CONN 1.6/5.6 RCPT R/A 75 ... |
MRF1.6/5.6-AP-2.5C | Hirose Elect... | 14.82 $ | 1000 | CONN 1.6/5.6 PLG STR 75OH... |
MRF1.6/5.6-PJ-2.5C | Hirose Elect... | 15.46 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1550NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 40V 175MHZ TO272-6... |
MRF1513NT1 | NXP USA Inc | 4.07 $ | 3000 | FET RF 40V 520MHZ PLD-1.5... |
MRF1517NT1 | NXP USA Inc | -- | 9000 | FET RF 25V 520MHZ PLD-1.5... |
MRF136 | M/A-Com Tech... | -- | 740 | FET RF 65V 400MHZ 211-07R... |
MRF151A | M/A-Com Tech... | 66.38 $ | 59 | FET RF N-CH 50V 150W P-24... |
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MRF1511NT1 | NXP USA Inc | 4.64 $ | 1000 | FET RF 40V 175MHZ PLD-1.5... |
MRF1535FNT1 | NXP USA Inc | 13.17 $ | 1000 | FET RF 40V 520MHZ TO272-6... |
MRF1535NT1 | NXP USA Inc | 13.17 $ | 1000 | FET RF 40V 520MHZ TO272-6... |
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MRF157 | M/A-Com Tech... | 356.01 $ | 15 | FET RF 125V 80MHZ 368-03 ... |
MRF160 | M/A-Com Tech... | 26.96 $ | 60 | FET RF 65V 500MHZ 249-06R... |
MRF171A | M/A-Com Tech... | -- | 53 | FET RF 65V 200MHZ 211-07R... |
MRF166C | M/A-Com Tech... | 35.0 $ | 33 | FET RF 65V 500MHZ 319-07R... |
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MRF174 | M/A-Com Tech... | 35.88 $ | 92 | FET RF 65V 150MHZ 211-11R... |
MRF175LU | M/A-Com Tech... | 52.6 $ | 11 | FET RF 65V 400MHZ 333-04R... |
MRF140 | M/A-Com Tech... | 55.01 $ | 19 | FET RF 65V 150MHZ 211-11R... |
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MRF176GV | M/A-Com Tech... | 90.69 $ | 5 | FET RF 2CH 125V 225MHZ 37... |
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