MRF18060ALR5

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The MRF18060ALR5 is a N-Channel RF Lateral MOSFET designed for high power, high efficiency industrial applications. It features a wide range of high frequency operation (up to 5000 MHz) and has low gate-source capacitance which makes it ideal for high power and high speed operation.

The MRF18060ALR5 has an integrated advanced technology design which allows for fast switching at maximum frequency levels. This unique design includes an advanced low RDS(on) of 10 mΩ, a low gate charge of 60 nC, as well as a high peak current rating up to 10 A.

The MRF18060ALR5 is designed for a wide range of applications such as RF power amplifiers, RF linear amplifiers, gain control, RF oscillators, push pull amplifiers and power dividers. The fast switching speeds and high performance make the MRF18060ALR5 an ideal choice for high frequency and power applications.

The working principle of the MRF18060ALR5 is based on the field effect transistor (FET) technology. A FET is an active solid-state device in which the conductivity of a channel is controlled by the amount of electrical current controlled by the gate. The MRF18060ALR5 uses an N-channel FET which is operated by a voltage applied to the gate. When voltage is applied to the gate, it controls the current flow and can be used to either switch on or off the device.

The integrated FET technology of the MRF18060ALR5 enables high frequency operation and fast switching speeds. The high peak current rating of 10 A enables the device to be used in high power applications. In addition, the low gate charge of 60 nC makes the device suitable for use in high frequency and power applications.

The MRF18060ALR5 is a versatile device which can be used in a variety of industrial applications, such as RF power amplifiers, RF linear amplifiers, gain control, RF oscillators, push pull amplifiers and power dividers. The fast switching speeds and high performance features makes the MRF18060ALR5 an ideal choice for high frequency and power applications.

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