MRF19085LSR3 Allicdata Electronics
Allicdata Part #:

MRF19085LSR3-ND

Manufacturer Part#:

MRF19085LSR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.99GHZ NI-780S
More Detail: RF Mosfet LDMOS 26V 850mA 1.93GHz ~ 1.99GHz 13dB 1...
DataSheet: MRF19085LSR3 datasheetMRF19085LSR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.93GHz ~ 1.99GHz
Gain: 13dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 850mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Description

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The MRF19085LSR3 is a N-Channel Enhancement-Mode Lateral MOSFET, designed for use in a variety of RF applications. The device offers superior high-performance, low-noise, high-drain efficiency, and robustness for operation in longer-duration applications. It is a commonly used device in a variety of RF designs, providing optimized electrical performance.

MRF19085LSR3 Application Field

The MRF19085LSR3 is ideal for a variety of RF applications, such as amplifiers, filters, oscillators, antennas, switches, and other RF circuit designs. It was developed to offer superior performance in these specific applications, ensuring peak operation. The device presents high-performance, low-noise, and high-drain efficiency. It also exhibits robustness for use in longer-duration applications, where providing consistent performance is paramount.

The device also presents a number of attractive benefits for RF circuit designs. It is light weight and compact, with a leadless SC-70 package that can easily fit into tight spaces. It also presents a low insertion loss, making it an ideal choice for amplifier designs. In addition, it presents excellent thermal resistance and wide temperature range, making it suitable for operation in extreme environmental conditions.

MRF19085LSR3 Working Principle

The MRF19085LSR3 N-Channel MOSFET works by controlling electrical current flow. This is done by creating a voltage difference between the gate and source of the circuit. The gate voltage controls the flow of current through the device. If a negative voltage is applied to the gate, the current will be blocked. If a positive voltage is applied, the current will flow freely. This principle is used to control electrical current in a variety of devices and RF applications.

The MRF19085LSR3 MOSFET also offers superior current handling capabilities. The device can handle large currents, making it ideal for use in applications such as switch mode power supplies, motor control circuits, and low-noise applications. It also offers superior high-frequency performance, with a switching speed of 1 nanosecond (ns) maximum.

Overall, the MRF19085LSR3 is a versatile, reliable, and high-performance N-Channel MOSFET. It is ideal for use in a variety of RF applications and offers superior electrical performance, along with robustness for use in longer-duration applications.

The specific data is subject to PDF, and the above content is for reference

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