Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	700MHz ~ 1.3GHz
Gain:	20.6dB
Voltage - Test:	50V
Current Rating:	10µA
Noise Figure:	--
Power - Output:	650W
Voltage - Rated:	105V
Package / Case:	SOT-979A
Supplier Device Package:	NI-1230H-4S

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MRF13750HR5 Application Field and Working Principle

Introduction

MRF13750HR5 is a new generation high power field effect transistor that combines high gain, low noise, wide bandwidth and high efficiency into an easily configured package. Featuring wide frequency operation up to 2 GHz, the high power capability of the MRF13750HR5 is an excellent choice for applications such as base station power amplifiers and repeaters.

Application Field

The MRF13750HR5 is designed for maximum efficiency and performance in high power applications up to 2GHz, such as base station power amplifiers and repeaters. In addition, MRF13750HR5 can be used for cellular, PCS, 3G, ISM, WiMAX and other applications requiring high dynamic range and linearity. The transistor also offers excellent RF RF performance in the 900-2700 MHz applications.

Features

The MRF13750HR5 offers excellent performance for high power applications. Some of its features include:• High gain linearity up to 27dB• High efficiency up to 64%• High power output up to 30W• Wide frequency operation up to 2 GHz• Low noise figure over a wide frequency range• ESD protection• Low thermal resistance design• Hermetic package

Working Principle

The MRF13750HR5 is a high power field effect transistor that uses a unique design to deliver high gain, low noise and wide bandwidth. The transistor has an input stage and an output stage connected in a cascode configuration.The input transistor acts as a common source amplifier, and is responsible for providing the transistor\'s high gain. The output stage is a common gate amplifier, which is responsible for maintaining a low output impedance, allowing for high power and excellent linearity.The transistor is designed to operate in a velocity modulation mode, and can deliver up to 30W of output power while maintaining a high level of linearity.

Conclusion

The MRF13750HR5 is a high power field effect transistor that offers excellent performance in high power applications. It has a high gain linearity up to 27dB, a high efficiency of up to 64%, and a wide frequency operation up to 2GHz. It also offers low noise figure over a wide frequency range, ESD protection, a low thermal resistance design, and a hermetic package. The transistor uses a cascode configuration to deliver the desired performance and is designed to operate in a velocity modulation mode.

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