MRF1570FNT1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	470MHz
Gain:	11.5dB
Voltage - Test:	12.5V
Current Rating:	--
Noise Figure:	--
Current - Test:	800mA
Power - Output:	70W
Voltage - Rated:	40V
Package / Case:	TO-272-8
Supplier Device Package:	TO-272-8 Flat Lead
Base Part Number:	MRF1570

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MRF1570FNT1 is a field-effect transistor (FET) specifically designed for radio frequency (RF) power amplifiers employed in industrial and consumer electronics applications. This FET also features reverse drain-to-gate voltage protection and ESD protection. It is a N-channel MOSFET especially suited for linear RF applications due to its superior linearity and gain characteristics.The device operates within a wide range of 0.3 to 2.7 GHz with a maximum output power of 15 watts. It was specifically designed with an internal source that gets connected to inter-finger metal-to-metal contact which minimizes thermal resistance. The Bias and Matching Network also improves the overall stability of the device, and it is thermally regenerative so that it works as an efficient heat-sink.The device is built using a special manufacturing process that optimizes the power dissipation of the device and offers improved self-heating control for the device, resulting in better efficiency and reliability. The device is also very stable and does not suffer from any changes in impedance.MRF1570FNT1 operates on a principle of positive feedback. This positive feedback amplifies the input signal and produces an output signal that is an amplified replica of the input signal. The positive feedback comes from an internal amplifier, which connects to an amplifier in the power output stage. This mirrors the input signal and produces a much higher output power.The device is also very robust and reliable and is capable of operating at high peak power levels. The device also has a low noise figure, high input and output impedance, thus making it suitable for high-frequency applications.The device is also very good at thermal management, as its thermal characteristics and ESD protection keep the device cool and ensure high-performance operation. The device also exhibits high linearity and gain, making it suitable for RF transmitters and receivers.MRF1570FNT1 application field and working principle is thus an example of the best type of device for high-frequency, high-power applications, due to its robustness, stability, low noise figure, and high linearity and gain. The device can also be used in a wide range of industrial and consumer electronics applications, as it is versatile enough to be used in various scenarios.

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