Allicdata Part #: | 1465-1156-ND |
Manufacturer Part#: |
MRF154 |
Price: | $ 350.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 125V 100MHZ 368-03 |
More Detail: | RF Mosfet N-Channel 50V 800mA 2MHz ~ 100MHz 17dB 6... |
DataSheet: | MRF154 Datasheet/PDF |
Quantity: | 8 |
1 +: | $ 318.55300 |
10 +: | $ 306.75700 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 2MHz ~ 100MHz |
Gain: | 17dB |
Voltage - Test: | 50V |
Current Rating: | 60A |
Noise Figure: | -- |
Current - Test: | 800mA |
Power - Output: | 600W |
Voltage - Rated: | 125V |
Package / Case: | 368-03 |
Supplier Device Package: | 368-03, Style 2 |
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The MRF154 field effect transistor (FET) is a device used in radio frequency (RF) applications, and is specifically designed to operate in the gigahertz frequency range. It is a high-power bipolar junction transistor (BJT) with a small signal-to-noise ratio.
The MRF154 is a lateral N-channel enhancement-mode device, also known as an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It has a common gate, an N-type drain, and an N-type source. It is designed to switch high current while dissipating minimal heat. This is due to its high frequency operation, which allows it to switch large amounts of current without needing to dissipate a great amount of heat.
The MRF154 is primarily used in RF power amplifier applications, such as mobile phone base stations, GPS receivers, WiFi systems, and television broadcast systems. Its use in RF applications has numerous benefits. It has excellent linearity and power efficiency, making it well suited for linear amplification. It also has good thermal characteristics, allowing it to handle high-power applications without rapidly overheating.
In terms of its working principle, the MRF154 operates using depletion-mode MOSFET technology. Depletion-mode MOSFETs operate by controlling the gate-to-source voltage (VGS). By changing VGS, the device is able to reduce the amount of current flowing through the drain-to-source path, thus controlling the output power.
Additionally, the MRF154 is able to operate using a drain-gate voltage, which is known as a negative bias. This allows the device to be used in applications that require a high linearity gain, as it can be biased in such a way as to reduce distortion while still providing a high output power.
Overall, the MRF154 is an excellent choice for applications requiring moderate-to-high linearity and power efficiency. Its ability to operate in the gigahertz range means that it can handle high-power applications with minimal heat dissipation. It is also able to operate using drain-gate bias, which allows it to reduce distortion while providing a high output power. Altogether, these features make the MRF154 an excellent choice for RF power amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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