| Allicdata Part #: | 1465-1148-ND |
| Manufacturer Part#: |
MRF137 |
| Price: | $ 30.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | M/A-Com Technology Solutions |
| Short Description: | FET RF 65V 400MHZ 211-07 |
| More Detail: | RF Mosfet N-Channel 28V 25mA 150MHz ~ 400MHz 7.7dB... |
| DataSheet: | MRF137 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 30.18000 |
| 10 +: | $ 29.27460 |
| 100 +: | $ 28.67100 |
| 1000 +: | $ 28.06740 |
| 10000 +: | $ 27.16200 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | N-Channel |
| Frequency: | 150MHz ~ 400MHz |
| Gain: | 7.7dB ~ 16dB |
| Voltage - Test: | 28V |
| Current Rating: | 5A |
| Noise Figure: | 1.5dB |
| Current - Test: | 25mA |
| Power - Output: | 30W |
| Voltage - Rated: | 65V |
| Package / Case: | 211-07 |
| Supplier Device Package: | 211-07, Style 2 |
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MRF137 is a high-power, high-energy, wide-band, and high-gain, N-channel enhancement mode MOSFET. It has many applications in the RF field due to its wide band output as well as its high power-handling capability. The most commonly used application is as an amplifier in aRadio frequencies (RF) system. It is also widely used in computer peripherals, aircraft systems, and in audio equipment.
The working principle of the MRF137 is based on the field effect transistor (FET). FETs are three-terminal devices that control the current flow in a circuit. The current flow is based on the voltage applied to the gate to control the drain current and determine the output impedance. With the MRF137, the gate control is applied through the input of a gate resistor, which controls the slope of a voltage ramp voltage applied to the gate.
The FET also has an inherent gain that can be used to amplify a signal. It achieves this gain by controlling the width of a conduction channel across the drain region. The wider the channel, the more current is allowed to flow, thus amplifying the signal. The MRF137 has an intrinsic gain of up to 26dB, which is high compared to some other FETs.
The MRF137 also has excellent reverse isolation performance due to its large reverse breakdown voltage in the range of 12 to 18 volts. This means that signals injected at the input side of the device will not be conducted to the output. This feature is extremely important in RF applications where signals must be isolated from each other to avoid interference.
The fact that the MRF137 has a wide frequency range makes it suitable for use in radios, wireless communication systems, satellite receivers, and other applications that require a wide frequency range. In addition, its high gain makes it a good choice for high-power applications, such as microwave communications. The device also has very low input capacitance and low power dissipation.
The MRF137 is an extremely versatile device. It can be used as an amplifier, in frequency multipliers, and in numerous other RF applications. It has a high input impedance, which makes it ideal for applications where the input impedance must remain constant over a wide frequency range. The device also has good linearity, which means that it can accurately reproduce a signal in a wide range of frequencies.
In conclusion, the MRF137 is an extremely versatile device with many applications in the RF field. Its inherent gain and reverse isolation make it a good choice for amplifying, frequency multiplying, and numerous other applications. The device has a wide frequency range and low input capacitance, allowing it to be used in applications that require precise signal reproduction.
The specific data is subject to PDF, and the above content is for reference
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MRF137 Datasheet/PDF