MRF1535NT1

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The MRF1535NT1 is a silicon field effect transistor designed for use in Class AB RF power amplification at frequencies of up to 970 MHz. The device is ideal for use in high power applications such as Amplified Low Power Television transmitters and RF power amplifiers. With its design based on the latest MOSFET technology, the device can provide excellent gain, power and efficiency performance.

The device is an N-Channel, E-Mode GaAs Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with an enhancement design. The operating temperature range of the device is between -55℃ to +225℃, with the device able to withstand up to 20 volt Vds. The maximum power dissipation of the device is 450 watt, with the device able to support currents up to 90 amperes. The device offers a low thermal resistance capability, which is ideal for high power applications.

The device has a high breakdown voltage of 500 volts, which is ideal for applications where high voltage operation is required. The device is also capable of operating at high frequencies up to 970 MHz. The high frequency operation makes the device suitable for use in Amplified Low Power Television transmitters and RF power amplifiers.

The working principle of the device is based on the principle of high-frequency transistor operation. When the transistor is turned on, a current is allowed to flow from the gate to the drain. This current is referred to as the gate current, and is used to control the performance of the device. When the gate current is increased, the device conductivity is also increased, allowing more current to flow through it. This current translates into more available power.

The gate-source voltage is used to control the current flowing through the device. When the voltage is increased, the current is also increased, thus increasing the power output of the device. The source voltage is also used to control the voltage applied to the source pin of the device. The gate-source voltage and source voltage can be adjusted to optimize the performance of the device.

The MRF1535NT1 device is suitable for use in Class AB (High Efficiency) RF Amplifiers and High Power Wide Band Amplifiers. The device is also suitable for use in Automotive and High Voltage applications. The design of the device is based on the latest MOSFET technology, which provides excellent gain and power performance. The device is capable of operating at frequencies up to 970 MHz, making it ideal for high power applications.

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