MRF18085ALSR3 Allicdata Electronics
Allicdata Part #:

MRF18085ALSR3-ND

Manufacturer Part#:

MRF18085ALSR3

Price: $ 29.55
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.88GHZ NI-780SRF Mosfet LDMOS 26V 800m...
More Detail: N/A
DataSheet: MRF18085ALSR3 datasheetMRF18085ALSR3 Datasheet/PDF
Quantity: 250
1 +: $ 29.55000
10 +: $ 28.66350
100 +: $ 28.07250
1000 +: $ 27.48150
10000 +: $ 26.59500
Stock 250Can Ship Immediately
$ 29.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.81GHz ~ 1.88GHz
Gain: 15dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 800mA
Power - Output: 85W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Base Part Number: --
Description

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MRF18085ALSR3 is a high-performance, low-cost monolithic microwave multiplier IC, which has been designed as a suitable step-amplifier, multiplier and driver for frequency-multiplied applications. The device offers excellent linearity and gain in various frequencies from 800 to 1000 MHz. It is divided into two transistors to provide separate, independent 1X and 2X outputs.This IC has two field-effect transistors (FETs) which are connected with an RF multiplier circuit. The input signal flows through the 1X output transistor and is then multiplied by the local oscillator signal coupled through the 2X transistor to the multiplier network. The signal is then amplified and coupled to the appropriate output port.The MRF18085ALSR3 is an efficient device that offers excellent input and output return losses and good third-order intercept points. It also has an integrated bias control circuit, which makes it suitable for stable operation over wide temperature and process variations. The bias voltage is controlled from +2.5V to +2.8V and the maximum junction temperature is 150°C. Thus, it provides excellent transistor characteristic stability over temperature and process variations.In addition, the MRF18085ALSR3 utilizes depletion-mode FETs (DMFETs) which feature low noise and low power operation. This makes the device ideal for applications in which power efficiency is of utmost importance. These FETs are also capable of handling higher powers for higher gain stages.Since the MRF18085ALSR3 is also power-efficient and capable of operating at high frequencies, it is often used in wireless and broadband communications, including radio frequency (RF), microwave, and wideband systems. Furthermore, it can be used in satellite broadcasting and telecommunication systems, radar and navigation systems, and other applications which require efficient RF multipliers and step amplifiers.In summary, the MRF18085ALSR3 is a high-performance monolithic IC, which provides excellent low-noise operation, linearity, gain, and efficiency. It is ideal for frequency-multiplied applications in high-frequency wireless and broadband communication systems, and can be used as an RF multiplier, step-amplifier, and driver. The device also features low-power operation, low noise, high power handling capability, and excellent transistor characteristic stability over temperature and process variations. Thus, the MRF18085ALSR3 is a cost-efficient and reliable solution for various communication applications.

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