MRF19085LR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.93GHz ~ 1.99GHz
Gain:	13dB
Voltage - Test:	26V
Current Rating:	--
Noise Figure:	--
Current - Test:	850mA
Power - Output:	18W
Voltage - Rated:	65V
Package / Case:	NI-780
Supplier Device Package:	NI-780

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MRF19085LR3 application field and working principle

MRF19085LR3 is an RF field-effect transistor that belongs to a group of transistors referred to as "metal-oxide semiconductor field-effect transistors" or short MOSFETs. These kind of transistors work as switches, and exhibit very low RDS(ON). MRF19085LR3 is a RF MOSFET with extremely low RDS(ON) over 500mohms at -25V, making it suitable for a wide range of low voltage applications.In general, a MOSFET is a three terminal electronic device consisting of three layers that are separated by a thin insulating layer. The layer between the operation layer and the drain layer is the gate. The three terminals of the MOSFET are the source (S), gate (G) and drain (D). When the gate voltage is equal to the drain voltage, the channel through the MOSFET will conduct current from the drain to the source. This current flow can be controlled by adjusting the gate voltage of the MOSFET.MRF19085LR3 MOSFETs are very versatile and can be used in a wide variety of applications. These include power supply switching, power supply converters, motor controlling, power amplifiers and many more.The most prominent application of MRF19085LR3 MOSFETs is in RF power amplification circuits. These circuits are used in radio communication systems, where the goal is to convert the weak-link energy of the radio frequency signal into a powerful signal that can be used for effective communication.In order to do this, the MRF19085LR3 MOSFETs are used to convert the RF signal into a strong RF wave. To do this, the drain voltage is increased by applying a voltage to the gate. This causes an increase in the current flowing from drain to source, thus amplifying the RF signal.The most common application of the MRF19085LR3 is in RF power amplifier designs. Such amplifiers are used in situations where a high power output is required, such as in broadcast or cellular applications. They can also be used in applications where low noise is desired, such as in scientific measuring systems.In summary, the MRF19085LR3 MOSFET is a versatile device that can be used in a variety of applications, ranging from power supplies to RF amplifiers. It is an excellent choice for low-voltage applications, due to its excellent RDS(ON) performance. The MRF19085LR3 MOSFET provides a reliable, high performance solution for applications where a high power output is required.

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