Allicdata Part #: | MT28EW128ABA1HPC-1SITTR-ND |
Manufacturer Part#: |
MT28EW128ABA1HPC-1SIT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 64LBGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
DataSheet: | MT28EW128ABA1HPC-1SIT TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8, 8M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 95ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-LBGA (11x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the vital components of computers today, and MT28EW128ABA1HPC-1SIT TR has become an increasingly popular choice of memory for many applications. From its efficient circuitry, through to its ultra-fast speeds, the performance of MT28EW128ABA1HPC-1SIT TR allows computers to work at optimal efficiency levels.
MT28EW128ABA1HPC-1SIT TR is a type of non-volatile memory that uses Flash technology to store data. This is an ideal choice for use in a wide range of applications, from large-scale storage systems, to small embedded or portable devices. It offers a degree of flexibility that can be tailored to the specific needs of any given application.
MT28EW128ABA1HPC-1SIT TR works by chemically altering the silicon chip in which it is embedded. This process is known as ion implantation and is one of the main design factors of Flash memory. By implanting ions into the silicon chip, electrical charge is added to the memory cells, hence unlocking the ability to store data. When power is removed, the ions remain within the silicon, preserving the data within the cells.
In its most basic form, MT28EW128ABA1HPC-1SIT TR is a form of Flash memory that uses charge-based memory cells, known as Floating Gate Transistors, to store data. These transistor cells require significantly less power than their traditional static RAM counterparts, while also offering higher levels of data retention. In addition to this, Floating Gate Transistors require no refresh cycle as SRAM does, further reducing power consumption.
MT28EW128ABA1HPC-1SIT TR is used across a wide range of applications, from consumer electronics, through to industrial process control and medical imaging. Its flexibility and durability ensure that it is the memory of choice for many customer-oriented applications, as well as for long-term data storage projects, where power-consumption and cost are both considered important factors.
The dependability and performance of MT28EW128ABA1HPC-1SIT TR has also made it the memory of choice for applications that require ruggedness, such as portable and embedded devices, as well as in harsh industrial environments. Its high data retention rating, combined with its low power requirements and lack of refresh cycles, make it an excellent choice for applications that demand reliability and fast response times.
MT28EW128ABA1HPC-1SIT TR\'s versatility, performance and durability have made it an attractive option for a wide range of applications. Its reliability and efficiency make it the go-to choice for many engineers, allowing them to build reliable and efficient systems, as well as reducing overall power consumption. With its fast read/write times and extensive data retention capabilities, MT28EW128ABA1HPC-1SIT TR is a great choice for both consumer and professional applications.
The specific data is subject to PDF, and the above content is for reference
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