Allicdata Part #: | MT28F004B5VG-8TTR-ND |
Manufacturer Part#: |
MT28F004B5VG-8 T TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80n... |
DataSheet: | MT28F004B5VG-8 T TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 80ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F004B5 |
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The MT28F004B5VG-8 T TR is a 4Mb, 3V only memory integrated circuit (IC) from Micron, the world’s leading supplier of ICs for embedded and industrial markets. This IC offers customers an optimal combination of small size and low power consumption, making it an ideal choice for memory storage in embedded applications. In this article, we will discuss the application fields and working principle of the MT28F004B5VG-8 T TR.
Memory is an integral part of many embedded systems, and the MT28F004B5VG-8 T TR is no exception. This IC is used in applications ranging from automotive navigation systems to medical device development projects. The device offers on-chip error correction code (ECC) capabilities, allowing the system designer to ensure reliable data storage and transfer. The MT28F004B5VG-8 T TR also features built-in fail-safe mechanisms, allowing for reliable operation even in the event of an unexpected power cycle. With an industry-standard DMA bus architecture, the device can be integrated into existing system designs with minimal effort.
In terms of its working principles, the MT28F004B5VG-8 T TR is a single-bit non�volatile memory (NVM) device. This means that the device can store data without the need for power. It also means that the device can retain data even after a power cycle. As its name implies, the MT28F004B5VG-8 T TR allows data to be written to and read from four million bits of addressable memory. The device is organized into page arrays, with up to 512 pages of memory each. These page arrays can be programmed and erased in large blocks, allowing for fast data storage and retrieval.
The MT28F004B5VG-8 T TR is also designed for rapid programming and high-frequency applications. It features two program/verify modes and is designed to operate up to 208 MHz. The device also features quick erase capability, allowing for rapid data rewriting. This make the device an ideal solution for applications requiring quick data storage and retrieval.
The MT28F004B5VG-8 T TR is also designed to offer power savings and improved system performance. It features low-voltage operation and includes built-in Power-On Reset (POR) and Comparator-Monitored Low Voltage Detection (CMOS) circuitry. This allows the device to efficiently regulate its power levels, ensuring that the system remains reliable and performs optimally.
In conclusion, the MT28F004B5VG-8 T TR is an important 4Mb, 3V memory IC from Micron. This device is used in a wide range of embedded applications, offering improved reliability and power savings. It allows for quick data storage and retrieval, and operates up to 208 MHz. With its on-chip ECC and fail-safe circuitry, the device offers a reliable and fast solution for memory storage in embedded systems.
The specific data is subject to PDF, and the above content is for reference
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